Helium implant depth dependence on thermal growth of nanocavities in silicon

E. Ntsoenzok; S. Ashok; G. Regula; B. Pichaud

Helium implant depth dependence on thermal growth of nanocavities in silicon

E. Ntsoenzok, S. Ashok, G. Regula, B. Pichaud

Research output: Contribution to conference › Paper › peer-review

Abstract

Silicon samples were implanted with both 50 keV and 1.55 MeV ³He ions and annealed at different temperatures. The thermal growth of cavities was performed using transmission electron microscopy (TEM) measurements. Results show a significant difference in the formation and growth of cavities. Implantation of 50 keV ions to a total dose of 2.83 × 10 ¹⁶ He/cm² results in the unexpected formation of platelets when the annealing temperature is 400°C, while sample implanted with 1.55 MeV at an equivalent helium concentration (5×10 ¹⁶He/cm²) gives rise to spherical cavities after the same thermal treatment.

Original language	English (US)
Pages	2382-2386
Number of pages	5
State	Published - Dec 1 2004
Event	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China Duration: Oct 18 2004 → Oct 21 2004

Other

Other	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
Country/Territory	China
City	Beijing
Period	10/18/04 → 10/21/04

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@conference{f95bf71a8bb9452d850382d2c52a8253,

title = "Helium implant depth dependence on thermal growth of nanocavities in silicon",

abstract = "Silicon samples were implanted with both 50 keV and 1.55 MeV 3He ions and annealed at different temperatures. The thermal growth of cavities was performed using transmission electron microscopy (TEM) measurements. Results show a significant difference in the formation and growth of cavities. Implantation of 50 keV ions to a total dose of 2.83 × 10 16 He/cm2 results in the unexpected formation of platelets when the annealing temperature is 400°C, while sample implanted with 1.55 MeV at an equivalent helium concentration (5×10 16He/cm2) gives rise to spherical cavities after the same thermal treatment.",

author = "E. Ntsoenzok and S. Ashok and G. Regula and B. Pichaud",

year = "2004",

month = dec,

day = "1",

language = "English (US)",

pages = "2382--2386",

note = "2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 ; Conference date: 18-10-2004 Through 21-10-2004",

}

TY - CONF

T1 - Helium implant depth dependence on thermal growth of nanocavities in silicon

AU - Ntsoenzok, E.

AU - Ashok, S.

AU - Regula, G.

AU - Pichaud, B.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Silicon samples were implanted with both 50 keV and 1.55 MeV 3He ions and annealed at different temperatures. The thermal growth of cavities was performed using transmission electron microscopy (TEM) measurements. Results show a significant difference in the formation and growth of cavities. Implantation of 50 keV ions to a total dose of 2.83 × 10 16 He/cm2 results in the unexpected formation of platelets when the annealing temperature is 400°C, while sample implanted with 1.55 MeV at an equivalent helium concentration (5×10 16He/cm2) gives rise to spherical cavities after the same thermal treatment.

AB - Silicon samples were implanted with both 50 keV and 1.55 MeV 3He ions and annealed at different temperatures. The thermal growth of cavities was performed using transmission electron microscopy (TEM) measurements. Results show a significant difference in the formation and growth of cavities. Implantation of 50 keV ions to a total dose of 2.83 × 10 16 He/cm2 results in the unexpected formation of platelets when the annealing temperature is 400°C, while sample implanted with 1.55 MeV at an equivalent helium concentration (5×10 16He/cm2) gives rise to spherical cavities after the same thermal treatment.

UR - http://www.scopus.com/inward/record.url?scp=21644447954&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21644447954&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:21644447954

SP - 2382

EP - 2386

T2 - 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004

Y2 - 18 October 2004 through 21 October 2004

ER -

Helium implant depth dependence on thermal growth of nanocavities in silicon

Abstract

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