Helium-induced nanocavities in silicon: Formation and properties

Sanjay Rangan; S Ashok; G. Chen; D. Theodore

Helium-induced nanocavities in silicon: Formation and properties

Sanjay Rangan, S Ashok, G. Chen, D. Theodore

Research output: Contribution to journal › Conference article › peer-review

Abstract

Nanocavities in Si formed by He ion implantation and anneal are of interest for impurity gettering and localized lifetime control, an in layer splitting techniques used in wafer bonding. With sequential thermal anneal following cascade He implantation (40-160 keV, 2 × 10¹⁵ - 4 × 10¹⁶ cm^-2) we have obtained multiple cavity layers. Transmission electron microscopy data reveal that, under isothermal anneal, the cavity shape changes from a distinct, aligned hexagonal geometry to a rounded spheroidal shape with increasing anneal time. Deep level transient spectroscopy (DLTS) measurements of the cavity region show broad minority carrier (electron in p-type Si) peaks indicative of the presence of defect clusters. Unusual capacitance-temperature (C-T) characteristics with steps and hysterisis are also seen, reflecting metastable behavior arising from change in structural configuration of the cavity defects.

Original language	English (US)
Pages (from-to)	255-261
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4746 I
State	Published - Jan 1 2002
Event	Physics of Semiconductor Devices - Delhi, India Duration: Dec 11 2001 → Dec 15 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

@article{52aa32a0a0a24e12a64d414556e1e78a,

title = "Helium-induced nanocavities in silicon: Formation and properties",

abstract = "Nanocavities in Si formed by He ion implantation and anneal are of interest for impurity gettering and localized lifetime control, an in layer splitting techniques used in wafer bonding. With sequential thermal anneal following cascade He implantation (40-160 keV, 2 × 1015 - 4 × 1016 cm-2) we have obtained multiple cavity layers. Transmission electron microscopy data reveal that, under isothermal anneal, the cavity shape changes from a distinct, aligned hexagonal geometry to a rounded spheroidal shape with increasing anneal time. Deep level transient spectroscopy (DLTS) measurements of the cavity region show broad minority carrier (electron in p-type Si) peaks indicative of the presence of defect clusters. Unusual capacitance-temperature (C-T) characteristics with steps and hysterisis are also seen, reflecting metastable behavior arising from change in structural configuration of the cavity defects.",

author = "Sanjay Rangan and S Ashok and G. Chen and D. Theodore",

year = "2002",

month = jan,

day = "1",

language = "English (US)",

volume = "4746 I",

pages = "255--261",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Physics of Semiconductor Devices ; Conference date: 11-12-2001 Through 15-12-2001",

}

TY - JOUR

T1 - Helium-induced nanocavities in silicon

T2 - Physics of Semiconductor Devices

AU - Rangan, Sanjay

AU - Ashok, S

AU - Chen, G.

AU - Theodore, D.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Nanocavities in Si formed by He ion implantation and anneal are of interest for impurity gettering and localized lifetime control, an in layer splitting techniques used in wafer bonding. With sequential thermal anneal following cascade He implantation (40-160 keV, 2 × 1015 - 4 × 1016 cm-2) we have obtained multiple cavity layers. Transmission electron microscopy data reveal that, under isothermal anneal, the cavity shape changes from a distinct, aligned hexagonal geometry to a rounded spheroidal shape with increasing anneal time. Deep level transient spectroscopy (DLTS) measurements of the cavity region show broad minority carrier (electron in p-type Si) peaks indicative of the presence of defect clusters. Unusual capacitance-temperature (C-T) characteristics with steps and hysterisis are also seen, reflecting metastable behavior arising from change in structural configuration of the cavity defects.

AB - Nanocavities in Si formed by He ion implantation and anneal are of interest for impurity gettering and localized lifetime control, an in layer splitting techniques used in wafer bonding. With sequential thermal anneal following cascade He implantation (40-160 keV, 2 × 1015 - 4 × 1016 cm-2) we have obtained multiple cavity layers. Transmission electron microscopy data reveal that, under isothermal anneal, the cavity shape changes from a distinct, aligned hexagonal geometry to a rounded spheroidal shape with increasing anneal time. Deep level transient spectroscopy (DLTS) measurements of the cavity region show broad minority carrier (electron in p-type Si) peaks indicative of the presence of defect clusters. Unusual capacitance-temperature (C-T) characteristics with steps and hysterisis are also seen, reflecting metastable behavior arising from change in structural configuration of the cavity defects.

UR - http://www.scopus.com/inward/record.url?scp=0036405927&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036405927&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036405927

SN - 0277-786X

VL - 4746 I

SP - 255

EP - 261

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

Y2 - 11 December 2001 through 15 December 2001

ER -

Helium-induced nanocavities in silicon: Formation and properties

Abstract

All Science Journal Classification (ASJC) codes

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