Heterogeneous Integration of Atomically Thin Semiconductors for Non-von Neumann CMOS

Keyphrases

• 2D Materials 25%
• Activation Function 25%
• Atomically Thin 25%
• Complementary Metal Oxide Semiconductor 100%
• Complementary Metal-oxide-semiconductor Technology 50%
• Energy Burden 25%
• Field-effect Transistors 75%
• Heterogeneous Integration 100%
• High Performance 25%
• Integrated Circuits 50%
• Inverter 25%
• Manufacturing Process 25%
• Memory Storage 25%
• Molybdenite 25%
• N-doped MoS2 25%
• Neuromorphic Computing 25%
• Non-analog 25%
• Non-volatile Memory 25%
• Non-von Neumann 100%
• P-type 50%
• P-type Semiconductor 25%
• Performance Fields 25%
• Physical Separation 25%
• Positioning Accuracy 25%
• Process Flow 25%
• Semiconductor Electronics 25%
• Semiconductor Thin Films 100%
• Storage Capability 25%
• Tanh 25%
• Transition Metal Dichalcogenides 50%
• Type Transition 25%
• Vanadium Doped 25%
• Wafer-scale 50%
• WSe2 25%

Material Science

• Complementary Metal-Oxide-Semiconductor Device 100%
• Electronic Circuit 33%
• Field Effect Transistor 50%
• Neuromorphic Computing 16%
• Transition Metal Dichalcogenide 33%
• Two-Dimensional Material 16%
• Vanadium 16%