TY - GEN
T1 - Heterojunction resonant tunneling diode at the atomic limit
AU - Ghosh, Ram Krishna
AU - Lin, Yu Chuan
AU - Robinson, Joshua A.
AU - Datta, Suman
N1 - Funding Information:
This work was supported by the Center for Low Energy Systems Technology (LEAST), one of six centers supported by the STARnet phase of the Focus Center Research Program (FCRP), a Semiconductor Research Corporation program sponsored by MARCO and DARPA.
Publisher Copyright:
© 2015 IEEE.
PY - 2015/10/5
Y1 - 2015/10/5
N2 - In this work, we present atomically thin resonant tunnel diode, based on vertically stacked heterostructures by combining graphene with layered transition-metal dichalocogenides (TMDs) such as molybdenum disulfide (MoS2), and tungsten diselenide (WSe2). Density functional theory (DFT) coupled with non-equilibrium Green's function (NEGF) transport calculation shows resonant tunnelling in heterolayer TMD and graphene (i.e. MoS2-WSe2-Gr) system with a prominent negative differential resistance (NDR) characteristic. However, homolayer TMD-graphene stack (i.e. bilayer WSe2-Gr) does not show any NDR in its I-V characteristics.
AB - In this work, we present atomically thin resonant tunnel diode, based on vertically stacked heterostructures by combining graphene with layered transition-metal dichalocogenides (TMDs) such as molybdenum disulfide (MoS2), and tungsten diselenide (WSe2). Density functional theory (DFT) coupled with non-equilibrium Green's function (NEGF) transport calculation shows resonant tunnelling in heterolayer TMD and graphene (i.e. MoS2-WSe2-Gr) system with a prominent negative differential resistance (NDR) characteristic. However, homolayer TMD-graphene stack (i.e. bilayer WSe2-Gr) does not show any NDR in its I-V characteristics.
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U2 - 10.1109/SISPAD.2015.7292310
DO - 10.1109/SISPAD.2015.7292310
M3 - Conference contribution
AN - SCOPUS:84959371773
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 266
EP - 269
BT - 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
Y2 - 9 September 2015 through 11 September 2015
ER -