@inproceedings{71bde4f2a0ff426e97ade85aa660ada3,
title = "Heterojunction resonant tunneling diode at the atomic limit",
abstract = "In this work, we present atomically thin resonant tunnel diode, based on vertically stacked heterostructures by combining graphene with layered transition-metal dichalocogenides (TMDs) such as molybdenum disulfide (MoS2), and tungsten diselenide (WSe2). Density functional theory (DFT) coupled with non-equilibrium Green's function (NEGF) transport calculation shows resonant tunnelling in heterolayer TMD and graphene (i.e. MoS2-WSe2-Gr) system with a prominent negative differential resistance (NDR) characteristic. However, homolayer TMD-graphene stack (i.e. bilayer WSe2-Gr) does not show any NDR in its I-V characteristics.",
author = "Ghosh, \{Ram Krishna\} and Lin, \{Yu Chuan\} and Robinson, \{Joshua A.\} and Suman Datta",
note = "Funding Information: This work was supported by the Center for Low Energy Systems Technology (LEAST), one of six centers supported by the STARnet phase of the Focus Center Research Program (FCRP), a Semiconductor Research Corporation program sponsored by MARCO and DARPA. Publisher Copyright: {\textcopyright} 2015 IEEE.; 20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 ; Conference date: 09-09-2015 Through 11-09-2015",
year = "2015",
month = oct,
day = "5",
doi = "10.1109/SISPAD.2015.7292310",
language = "English (US)",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "266--269",
booktitle = "2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015",
address = "United States",
}