High-aspect ratio patterning of MnAs films

W. Seidel; K. H. Ploog; R. Engel-Herbert; T. Hesjedal

doi:10.1088/0268-1242/21/10/025

High-aspect ratio patterning of MnAs films

W. Seidel, K. H. Ploog, R. Engel-Herbert, T. Hesjedal

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report the high-aspect ratio patterning of epitaxial MnAs-on-GaAs(0 0 1) films. The control of strain is key since MnAs-on-GaAs(0 0 1) exhibits a strain-stabilized coexistence of two chemically, elastically and magnetically distinct phases forming a self-organized stripe structure over a temperature range of 10-40 °C. Anisotropic plasma etching allows for high-aspect ratios and good reproducibility. Using Ti films as an etch mask, arbitrarily oriented structures can be transferred into films of up to 300 nm thickness. The removal of the masking material is challenging as MnAs reacts with all common acids, alkalis and even water. Optimum results are obtained by etching the Ti mask in hydrofluoric acid at elevated temperatures (>50 °C), where MnAs is entirely in its β-phase.

Original language	English (US)
Article number	025
Pages (from-to)	1502-1506
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	21
Issue number	10
DOIs	https://doi.org/10.1088/0268-1242/21/10/025
State	Published - Oct 10 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Cite this

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title = "High-aspect ratio patterning of MnAs films",

abstract = "We report the high-aspect ratio patterning of epitaxial MnAs-on-GaAs(0 0 1) films. The control of strain is key since MnAs-on-GaAs(0 0 1) exhibits a strain-stabilized coexistence of two chemically, elastically and magnetically distinct phases forming a self-organized stripe structure over a temperature range of 10-40 °C. Anisotropic plasma etching allows for high-aspect ratios and good reproducibility. Using Ti films as an etch mask, arbitrarily oriented structures can be transferred into films of up to 300 nm thickness. The removal of the masking material is challenging as MnAs reacts with all common acids, alkalis and even water. Optimum results are obtained by etching the Ti mask in hydrofluoric acid at elevated temperatures (>50 °C), where MnAs is entirely in its β-phase.",

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T1 - High-aspect ratio patterning of MnAs films

AU - Seidel, W.

AU - Ploog, K. H.

AU - Engel-Herbert, R.

AU - Hesjedal, T.

PY - 2006/10/10

Y1 - 2006/10/10

N2 - We report the high-aspect ratio patterning of epitaxial MnAs-on-GaAs(0 0 1) films. The control of strain is key since MnAs-on-GaAs(0 0 1) exhibits a strain-stabilized coexistence of two chemically, elastically and magnetically distinct phases forming a self-organized stripe structure over a temperature range of 10-40 °C. Anisotropic plasma etching allows for high-aspect ratios and good reproducibility. Using Ti films as an etch mask, arbitrarily oriented structures can be transferred into films of up to 300 nm thickness. The removal of the masking material is challenging as MnAs reacts with all common acids, alkalis and even water. Optimum results are obtained by etching the Ti mask in hydrofluoric acid at elevated temperatures (>50 °C), where MnAs is entirely in its β-phase.

AB - We report the high-aspect ratio patterning of epitaxial MnAs-on-GaAs(0 0 1) films. The control of strain is key since MnAs-on-GaAs(0 0 1) exhibits a strain-stabilized coexistence of two chemically, elastically and magnetically distinct phases forming a self-organized stripe structure over a temperature range of 10-40 °C. Anisotropic plasma etching allows for high-aspect ratios and good reproducibility. Using Ti films as an etch mask, arbitrarily oriented structures can be transferred into films of up to 300 nm thickness. The removal of the masking material is challenging as MnAs reacts with all common acids, alkalis and even water. Optimum results are obtained by etching the Ti mask in hydrofluoric acid at elevated temperatures (>50 °C), where MnAs is entirely in its β-phase.

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High-aspect ratio patterning of MnAs films

Abstract

All Science Journal Classification (ASJC) codes

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