Abstract
Fabrication of high aspect ratio submicron to nanometer range micro structures in LiNbO3 using a state of the art Schlumberger AMS 3000 focused ion beam (FIB) system is presented. The submicron structures with about 350 nm width and 1600 nm depth are fabricated by employing XeF2 gas assisted Gallium ion beam etching with 50 pA of ion beam current. A variety of opto-electronic devices such as micro sensors, directional couplers, extremely compact electro-optic modulators and wavelength filters could be built based on this type of high aspect ratio submicron structures in LiNbO3, which may lead to the next generation of integrated opto-electronic devices that have higher levels of device integration and enhanced functionality.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 40-43 |
| Number of pages | 4 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3805 |
| State | Published - 1999 |
| Event | Proceedings of the 1999 Photonic Devices and Algorithms for Computing - Denver, CO, USA Duration: Jul 22 1999 → Jul 23 1999 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering