High aspect ratio submicron microstructures in LiNbO3: fabrication and potential applications to photonic devices

Research output: Contribution to journalConference articlepeer-review

Abstract

Fabrication of high aspect ratio submicron to nanometer range micro structures in LiNbO3 using a state of the art Schlumberger AMS 3000 focused ion beam (FIB) system is presented. The submicron structures with about 350 nm width and 1600 nm depth are fabricated by employing XeF2 gas assisted Gallium ion beam etching with 50 pA of ion beam current. A variety of opto-electronic devices such as micro sensors, directional couplers, extremely compact electro-optic modulators and wavelength filters could be built based on this type of high aspect ratio submicron structures in LiNbO3, which may lead to the next generation of integrated opto-electronic devices that have higher levels of device integration and enhanced functionality.

Original languageEnglish (US)
Pages (from-to)40-43
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3805
StatePublished - Dec 1 1999
EventProceedings of the 1999 Photonic Devices and Algorithms for Computing - Denver, CO, USA
Duration: Jul 22 1999Jul 23 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'High aspect ratio submicron microstructures in LiNbO3: fabrication and potential applications to photonic devices'. Together they form a unique fingerprint.

Cite this