High-Barrier Al/p-Si Schottky Diodes

S. Ashok, K. Giewont

Research output: Contribution to journalArticlepeer-review

31 Scopus citations


Sequential implantation of argon ions and low-energy hydrogen ions has been found to yield Schottky barriers of exceptionally high values on p-type silicon. The interaction of these ions in Si is quite complex, involving donor defect generation, defect passivation, and acceptor dopant neutralization. The apparent synergism of these specific implants has resulted in Al/p-Si Schottky diodes with an effective barrier height as high as 0.83 eV, among the highest value reported for any metal/p-Si contact.

Original languageEnglish (US)
Pages (from-to)462-464
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
StatePublished - Sep 1985

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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