High density group iv semiconductor nanowire arrays fabricated in nanoporous alumina templates

Keyphrases

• Resistivity 100%
• Growth Conditions 100%
• High Density 100%
• Silicon Nanowires (SiNWs) 100%
• Activation Energy 100%
• Vapor-liquid-solid Growth 100%
• Dopant Sources 100%
• Nanowire Growth 100%
• Ge Nanowires 100%
• Nanoporous Alumina Templates 100%
• Semiconductor Nanowire Arrays 100%
• SiNW Array 100%
• N-type 100%
• Pore Size 50%
• Membrane Surface 50%
• Growth Process 50%
• Growth Rate 50%
• Nanoporous 50%
• Nanowires 50%
• Reduced Pressure 50%
• Electrical Characterization 50%
• Thin Film Deposition 50%
• Chemical Sensing 50%
• Pore Wall 50%
• Membrane Pore 50%
• Nanoscale Electronics 50%
• Biological Sensing 50%
• Wire Diameter 50%
• Nanowire Length 50%
• Nanoporous Membrane 50%
• Reduction Temperature 50%
• Biological Energy 50%
• Unintentional Doping 50%
• Electronic Chemicals 50%
• Nanoporous Alumina Membrane 50%
• Ge Thin Film 50%
• Vapor-liquid-solid Method 50%
• Contact Metal 50%
• Electrical Test 50%
• Phosphine 50%
• Catalytic Role 50%
• Si Thin Film 50%
• Electronic Sensing 50%
• Enabling Control 50%
• PH 3 50%
• Energy Conversion Applications 50%
• Semiconductor Nanowires 50%
• High-density Array 50%

Material Science

• Density 100%
• Nanowire 100%
• Aluminum Oxide 100%
• Electrical Resistivity 25%
• Doping (Additives) 25%
• Activation Energy 25%
• Nanoporous Material 12%
• Pore Size 12%
• Thin Film Deposition 12%