High-Density, Localized Quantum Emitters in Strained 2D Semiconductors

Gwangwoo Kim, Hyong Min Kim, Pawan Kumar, Mahfujur Rahaman, Christopher E. Stevens, Jonghyuk Jeon, Kiyoung Jo, Kwan Ho Kim, Nicholas Trainor, Haoyue Zhu, Byeong Hyeok Sohn, Eric A. Stach, Joshua R. Hendrickson, Nicholas R. Glavin, Joonki Suh, Joan M. Redwing, Deep Jariwala

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect- A nd strain-induced single-photon emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained 2D semiconductors are far from being understood. Here, we demonstrate a bottom-up, scalable, and lithography-free approach for creating large areas of localized emitters with high density (a150 emitters/um2) in a WSe2monolayer. We induce strain inside the WSe2monolayer with high spatial density by conformally placing the WSe2monolayer over a uniform array of Pt nanoparticles with a size of 10 nm. Cryogenic, time-resolved, and gate-tunable luminescence measurements combined with near-field luminescence spectroscopy suggest the formation of localized states in strained regions that emit single photons with a high spatial density. Our approach of using a metal nanoparticle array to generate a high density of strained quantum emitters will be applied to scalable, tunable, and versatile quantum light sources.

Original languageEnglish (US)
Pages (from-to)9651-9659
Number of pages9
JournalACS nano
Issue number6
StatePublished - Jun 28 2022

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy


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