High dielectric tunability in lead niobate pyrochlore films

M. Mirsaneh; B. E. Hayden; E. Furman; S. Perini; M. T. Lanagan; I. M. Reaney

doi:10.1063/1.3687722

High dielectric tunability in lead niobate pyrochlore films

M. Mirsaneh, B. E. Hayden, E. Furman, S. Perini, M. T. Lanagan, I. M. Reaney

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11 Scopus citations

Abstract

High throughput physical vapor deposition has been used to grow crystalline Pb _nNb ₂O _5n (0.6 < n < 4.6) thin films on a single chip. Relative permittivity (ε _r) and dielectric loss (tan ) were frequency independent between 100 Hz and 1 MHz and -60 °C-100° C. Dielectric tunability achieved a maximum in the cubic pyrochlore phase (Pb _1.2Nb ₂O _6.2, PN, Pb ≈ 38) of ∼26 (0.44 MV/cm). In comparison to barium strontium titanate (BST) and bismuth zinc niobate (BZN), PN exhibited attractive tan δ ∼ 0.0009 (0.013-0.005 in BST and 0.008-0.0005 in BZN), comparable or superior _r of 419 (450 in BST and 160-220 in BZN) and 26 tunability (∼50 in BST and 3.5 in BZN at equivalent fields). PN is thus considered an ideal candidate for tunable device applications.

Original language	English (US)
Article number	082901
Journal	Applied Physics Letters
Volume	100
Issue number	8
DOIs	https://doi.org/10.1063/1.3687722
State	Published - Feb 20 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3687722

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title = "High dielectric tunability in lead niobate pyrochlore films",

abstract = "High throughput physical vapor deposition has been used to grow crystalline Pb nNb 2O 5n (0.6 < n < 4.6) thin films on a single chip. Relative permittivity (ε r) and dielectric loss (tan ) were frequency independent between 100 Hz and 1 MHz and -60 °C-100° C. Dielectric tunability achieved a maximum in the cubic pyrochlore phase (Pb 1.2Nb 2O 6.2, PN, Pb ≈ 38) of ∼26 (0.44 MV/cm). In comparison to barium strontium titanate (BST) and bismuth zinc niobate (BZN), PN exhibited attractive tan δ ∼ 0.0009 (0.013-0.005 in BST and 0.008-0.0005 in BZN), comparable or superior r of 419 (450 in BST and 160-220 in BZN) and 26 tunability (∼50 in BST and 3.5 in BZN at equivalent fields). PN is thus considered an ideal candidate for tunable device applications.",

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T1 - High dielectric tunability in lead niobate pyrochlore films

AU - Mirsaneh, M.

AU - Hayden, B. E.

AU - Furman, E.

AU - Perini, S.

AU - Lanagan, M. T.

AU - Reaney, I. M.

PY - 2012/2/20

Y1 - 2012/2/20

N2 - High throughput physical vapor deposition has been used to grow crystalline Pb nNb 2O 5n (0.6 < n < 4.6) thin films on a single chip. Relative permittivity (ε r) and dielectric loss (tan ) were frequency independent between 100 Hz and 1 MHz and -60 °C-100° C. Dielectric tunability achieved a maximum in the cubic pyrochlore phase (Pb 1.2Nb 2O 6.2, PN, Pb ≈ 38) of ∼26 (0.44 MV/cm). In comparison to barium strontium titanate (BST) and bismuth zinc niobate (BZN), PN exhibited attractive tan δ ∼ 0.0009 (0.013-0.005 in BST and 0.008-0.0005 in BZN), comparable or superior r of 419 (450 in BST and 160-220 in BZN) and 26 tunability (∼50 in BST and 3.5 in BZN at equivalent fields). PN is thus considered an ideal candidate for tunable device applications.

AB - High throughput physical vapor deposition has been used to grow crystalline Pb nNb 2O 5n (0.6 < n < 4.6) thin films on a single chip. Relative permittivity (ε r) and dielectric loss (tan ) were frequency independent between 100 Hz and 1 MHz and -60 °C-100° C. Dielectric tunability achieved a maximum in the cubic pyrochlore phase (Pb 1.2Nb 2O 6.2, PN, Pb ≈ 38) of ∼26 (0.44 MV/cm). In comparison to barium strontium titanate (BST) and bismuth zinc niobate (BZN), PN exhibited attractive tan δ ∼ 0.0009 (0.013-0.005 in BST and 0.008-0.0005 in BZN), comparable or superior r of 419 (450 in BST and 160-220 in BZN) and 26 tunability (∼50 in BST and 3.5 in BZN at equivalent fields). PN is thus considered an ideal candidate for tunable device applications.

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High dielectric tunability in lead niobate pyrochlore films

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