High-dose carbon ion implantation studies in silicon

K. Srikanth; M. Chu; S. Ashok; N. Nguyen; K. Vedam

doi:10.1016/0040-6090(88)90443-9

High-dose carbon ion implantation studies in silicon

K. Srikanth, M. Chu, S. Ashok, N. Nguyen, K. Vedam

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15 Scopus citations

Abstract

The electrical properties of crystalline silicon (c-Si) subjected to high-dose (10¹⁷ cm^-2) implantation of carbon with varying post-anneal conditions have been investigated. The electrical barrier formation and carrier transport across the implanted layer have been studied using metal-implanted layer-silicon structures. In the as-implanted samples, a Schottky diode-like behavior is seen but with a very high diode ideality factor. The well-known influence of ion damage on the silicon surface barrier is clearly evident, but in addition we see the domination of transport by an Si-C buried layer formed after annealing. Spectroscopic ellipsometry measurements and FTIR spectroscopy confirm the formation of buried Si-C.

Original language	English (US)
Pages (from-to)	323-329
Number of pages	7
Journal	Thin Solid Films
Volume	163
Issue number	C
DOIs	https://doi.org/10.1016/0040-6090(88)90443-9
State	Published - Sep 1988

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(88)90443-9

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title = "High-dose carbon ion implantation studies in silicon",

abstract = "The electrical properties of crystalline silicon (c-Si) subjected to high-dose (1017 cm-2) implantation of carbon with varying post-anneal conditions have been investigated. The electrical barrier formation and carrier transport across the implanted layer have been studied using metal-implanted layer-silicon structures. In the as-implanted samples, a Schottky diode-like behavior is seen but with a very high diode ideality factor. The well-known influence of ion damage on the silicon surface barrier is clearly evident, but in addition we see the domination of transport by an Si-C buried layer formed after annealing. Spectroscopic ellipsometry measurements and FTIR spectroscopy confirm the formation of buried Si-C.",

author = "K. Srikanth and M. Chu and S. Ashok and N. Nguyen and K. Vedam",

note = "Funding Information: This work was supported in part by the Penn State Center for the Study of Particle Beam Interaction with Sohds, funded by IBM.",

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doi = "10.1016/0040-6090(88)90443-9",

language = "English (US)",

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T1 - High-dose carbon ion implantation studies in silicon

AU - Srikanth, K.

AU - Chu, M.

AU - Ashok, S.

AU - Nguyen, N.

AU - Vedam, K.

N1 - Funding Information: This work was supported in part by the Penn State Center for the Study of Particle Beam Interaction with Sohds, funded by IBM.

PY - 1988/9

Y1 - 1988/9

N2 - The electrical properties of crystalline silicon (c-Si) subjected to high-dose (1017 cm-2) implantation of carbon with varying post-anneal conditions have been investigated. The electrical barrier formation and carrier transport across the implanted layer have been studied using metal-implanted layer-silicon structures. In the as-implanted samples, a Schottky diode-like behavior is seen but with a very high diode ideality factor. The well-known influence of ion damage on the silicon surface barrier is clearly evident, but in addition we see the domination of transport by an Si-C buried layer formed after annealing. Spectroscopic ellipsometry measurements and FTIR spectroscopy confirm the formation of buried Si-C.

AB - The electrical properties of crystalline silicon (c-Si) subjected to high-dose (1017 cm-2) implantation of carbon with varying post-anneal conditions have been investigated. The electrical barrier formation and carrier transport across the implanted layer have been studied using metal-implanted layer-silicon structures. In the as-implanted samples, a Schottky diode-like behavior is seen but with a very high diode ideality factor. The well-known influence of ion damage on the silicon surface barrier is clearly evident, but in addition we see the domination of transport by an Si-C buried layer formed after annealing. Spectroscopic ellipsometry measurements and FTIR spectroscopy confirm the formation of buried Si-C.

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JO - Thin Solid Films

JF - Thin Solid Films

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High-dose carbon ion implantation studies in silicon

Abstract

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