High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors

Vahid Mirkhani, Shiqiang Wang, Kosala Yapabandara, Muhammad Shehzad Sultan, Min Prasad Khanal, Sunil Uprety, Burcu Ozden, Ehsan Hassani, Benjamin V. Schoenek, Dong Joo Kim, Tae Sik Oh, Ayayi Claude Ahyi, Sarit Dhar, Michael C. Hamilton, Mobbassar Hassan Sk, Minseo Park

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Solution-based bottom-gate zinc oxide thin film transistors (TFTs) were fabricated, remaining functional and demonstrating stability under extreme gamma irradiation conditions. Unpassivated TFTs were fabricated on samples with different number of ZnO layers grown via sol-gel spin coating technique. The devices were characterized before and after exposure to a cumulative dose of 220 MRad (air) of gamma irradiation. Atomic force microscopy (AFM), x-ray diffraction (XRD), and photoluminescence (PL) were employed to characterize the TFT active layers. Thickness measurements and optical images suggest the removal of the channel surface, conceivably due to cumulative effect of displacement damage near the ZnO surface. Device electrical characteristics were extracted from current-voltage measurements. The impact of displacement damage on the degradation/enhancement of device characteristics as a consequence of surface/bulk effects is discussed.

Original languageEnglish (US)
Article number105011
JournalSemiconductor Science and Technology
Issue number10
StatePublished - Oct 2021

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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