TY - JOUR
T1 - High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors
AU - Mirkhani, Vahid
AU - Wang, Shiqiang
AU - Yapabandara, Kosala
AU - Sultan, Muhammad Shehzad
AU - Khanal, Min Prasad
AU - Uprety, Sunil
AU - Ozden, Burcu
AU - Hassani, Ehsan
AU - Schoenek, Benjamin V.
AU - Kim, Dong Joo
AU - Oh, Tae Sik
AU - Ahyi, Ayayi Claude
AU - Dhar, Sarit
AU - Hamilton, Michael C.
AU - Sk, Mobbassar Hassan
AU - Park, Minseo
N1 - Publisher Copyright:
© 2021 IOP Publishing Ltd.
PY - 2021/10
Y1 - 2021/10
N2 - Solution-based bottom-gate zinc oxide thin film transistors (TFTs) were fabricated, remaining functional and demonstrating stability under extreme gamma irradiation conditions. Unpassivated TFTs were fabricated on samples with different number of ZnO layers grown via sol-gel spin coating technique. The devices were characterized before and after exposure to a cumulative dose of 220 MRad (air) of gamma irradiation. Atomic force microscopy (AFM), x-ray diffraction (XRD), and photoluminescence (PL) were employed to characterize the TFT active layers. Thickness measurements and optical images suggest the removal of the channel surface, conceivably due to cumulative effect of displacement damage near the ZnO surface. Device electrical characteristics were extracted from current-voltage measurements. The impact of displacement damage on the degradation/enhancement of device characteristics as a consequence of surface/bulk effects is discussed.
AB - Solution-based bottom-gate zinc oxide thin film transistors (TFTs) were fabricated, remaining functional and demonstrating stability under extreme gamma irradiation conditions. Unpassivated TFTs were fabricated on samples with different number of ZnO layers grown via sol-gel spin coating technique. The devices were characterized before and after exposure to a cumulative dose of 220 MRad (air) of gamma irradiation. Atomic force microscopy (AFM), x-ray diffraction (XRD), and photoluminescence (PL) were employed to characterize the TFT active layers. Thickness measurements and optical images suggest the removal of the channel surface, conceivably due to cumulative effect of displacement damage near the ZnO surface. Device electrical characteristics were extracted from current-voltage measurements. The impact of displacement damage on the degradation/enhancement of device characteristics as a consequence of surface/bulk effects is discussed.
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U2 - 10.1088/1361-6641/ac1c4e
DO - 10.1088/1361-6641/ac1c4e
M3 - Article
AN - SCOPUS:85116928051
SN - 0268-1242
VL - 36
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 10
M1 - 105011
ER -