High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi₂O₂ Se

High-mobility semiconducting ultrathin films form the basis of modern electronics, and may lead to the scalable fabrication of highly performing devices. Because the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional materials with both high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research^1-9. However, air-stable ultrathin semiconducting materials with superior performances remain elusive at present¹⁰. Here, we report ultrathin films of non-encapsulated layered Bi₂O₂ Se, grown by chemical vapour deposition, which demonstrate excellent air stability and high-mobility semiconducting behaviour. We observe bandgap values of ∼0.8 eV, which are strongly dependent on the film thickness due to quantum-confinement effects. An ultrahigh Hall mobility value of >20,000 cm² V^-1 s^-1 is measured in as-grown Bi₂O₂ Se nanoflakes at low temperatures. This value is comparable to what is observed in graphene grown by chemical vapour deposition¹¹ and at the LaAlO₃-SrTiO₃ interface¹², making the detection of Shubnikov-de Haas quantum oscillations possible. Top-gated field-effect transistors based on Bi₂O₂ Se crystals down to the bilayer limit exhibit high Hall mobility values (up to 450 cm² V ^-1 s^-1), large current on/off ratios (>10⁶) and near-ideal subthreshold swing values (∼65 mV dec^-1) at room temperature. Our results make Bi₂O₂ Se a promising candidate for future high-speed and low-power electronic applications.