TY - JOUR
T1 - High-energy proton radiation damage experiment on a hybrid CMOS detector
AU - Bray, Evan
AU - Falcone, Abraham D.
AU - Wages, Mitchell
AU - Burrows, David N.
AU - Brune, Carl R.
AU - Meisel, Zach
N1 - Funding Information:
We would like to thank the staff of the Physics Department at Ohio University and the Edwards Accelerator Lab for the generous use of their facilities and equipment, as well as providing the expertise and guidance necessary to ensure a smooth and successful experiment. This work was supported by the National Aeronautics and Space Administration under Grant Nos. NNX16AO90H and 80NSSC18K0147. The work at the Edwards Accelerator Laboratory was supported in part by the Ohio University College of Arts and Sciences and the U.S. Department of Energy under Grant No. DE-FG02-88ER40387. This paper has also been submitted to SPIE Proceedings.
Publisher Copyright:
© 2020 Society of Photo-Optical Instrumentation Engineers (SPIE).
PY - 2020/1/1
Y1 - 2020/1/1
N2 - We report on the results of an experiment to determine the effects of radiation damage caused by high-energy protons on an X-ray hybrid CMOS detector. This detector was utilized in a previous proton radiation experiment, which delivered a total dose to a selected region of ∼3 krad (Si). With updated hardware and experimental procedures, we further irradiated the detector with 7-MeV protons, delivering an additional 1.5 krad (Si) (2.78 × 109 protons/cm2 10 MeV equivalent) with increased uniformity to an overlapping region. The effects of this radiation on several important detector characteristics were analyzed after delivering doses of 0.5 and 1.0 krad. After 16 h of annealing at room temperature, detector performance was found to be unchanged in both cases.
AB - We report on the results of an experiment to determine the effects of radiation damage caused by high-energy protons on an X-ray hybrid CMOS detector. This detector was utilized in a previous proton radiation experiment, which delivered a total dose to a selected region of ∼3 krad (Si). With updated hardware and experimental procedures, we further irradiated the detector with 7-MeV protons, delivering an additional 1.5 krad (Si) (2.78 × 109 protons/cm2 10 MeV equivalent) with increased uniformity to an overlapping region. The effects of this radiation on several important detector characteristics were analyzed after delivering doses of 0.5 and 1.0 krad. After 16 h of annealing at room temperature, detector performance was found to be unchanged in both cases.
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U2 - 10.1117/1.JATIS.6.1.016002
DO - 10.1117/1.JATIS.6.1.016002
M3 - Article
AN - SCOPUS:85082931573
SN - 2329-4124
VL - 6
JO - Journal of Astronomical Telescopes, Instruments, and Systems
JF - Journal of Astronomical Telescopes, Instruments, and Systems
IS - 1
M1 - 016002
ER -