High frequency piezoelectric MEMS devices

I. G. Mina; H. Kim; I. Kim; S. Park; K. Choi; T. N. Jackson; R. L. Tutwiler; S. Trolier-McKinstry

doi:10.1109/ISAF.2007.4393375

High frequency piezoelectric MEMS devices

I. G. Mina, H. Kim, I. Kim, S. Park, K. Choi, T. N. Jackson, R. L. Tutwiler, S. Trolier-McKinstry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High frequency ultrasound array transducers are being explored for high resolution imaging systems. This increase in resolution is made possible by enabling a simultaneous increase in operating frequency (50 MHz to about 1GHz) and close-coupling of the electrical circuitry. Several different processing methods are being explored to fabricate array transducers. In one implementation, the piezoelectric transducer is prepared by mist deposition of PbZr_0.52Ti_0.48O₃ (PZT) films over Ni posts. In addition, a xylophone bar transducer has also been prototyped, again using thin film PZT as the active piezoelectric layer. Because the drive voltages of these transducers are low, close coupling of the electrical circuitry is possible. A CMOS transceiver for a 9 element-array has been fabricated in 0.35 μm process technology. The first generation CMOS transceiver chip contains beamforming electronics, receiver circuitry, and analog to digital converters with 27 Kbyte on-chip buffer memory.

Original language	English (US)
Title of host publication	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Pages	700-701
Number of pages	2
DOIs	https://doi.org/10.1109/ISAF.2007.4393375
State	Published - 2007
Event	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan Duration: May 27 2007 → May 31 2007

Publication series

Name	IEEE International Symposium on Applications of Ferroelectrics

Other

Other	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Country/Territory	Japan
City	Nara-city
Period	5/27/07 → 5/31/07

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ISAF.2007.4393375

Cite this

Mina, I. G., Kim, H., Kim, I., Park, S., Choi, K., Jackson, T. N., Tutwiler, R. L., & Trolier-McKinstry, S. (2007). High frequency piezoelectric MEMS devices. In 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF (pp. 700-701). Article 4393375 (IEEE International Symposium on Applications of Ferroelectrics). https://doi.org/10.1109/ISAF.2007.4393375

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title = "High frequency piezoelectric MEMS devices",

abstract = "High frequency ultrasound array transducers are being explored for high resolution imaging systems. This increase in resolution is made possible by enabling a simultaneous increase in operating frequency (50 MHz to about 1GHz) and close-coupling of the electrical circuitry. Several different processing methods are being explored to fabricate array transducers. In one implementation, the piezoelectric transducer is prepared by mist deposition of PbZr0.52Ti0.48O3 (PZT) films over Ni posts. In addition, a xylophone bar transducer has also been prototyped, again using thin film PZT as the active piezoelectric layer. Because the drive voltages of these transducers are low, close coupling of the electrical circuitry is possible. A CMOS transceiver for a 9 element-array has been fabricated in 0.35 μm process technology. The first generation CMOS transceiver chip contains beamforming electronics, receiver circuitry, and analog to digital converters with 27 Kbyte on-chip buffer memory.",

author = "Mina, {I. G.} and H. Kim and I. Kim and S. Park and K. Choi and Jackson, {T. N.} and Tutwiler, {R. L.} and S. Trolier-McKinstry",

year = "2007",

doi = "10.1109/ISAF.2007.4393375",

language = "English (US)",

isbn = "1424413338",

series = "IEEE International Symposium on Applications of Ferroelectrics",

pages = "700--701",

booktitle = "2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF",

note = "2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF ; Conference date: 27-05-2007 Through 31-05-2007",

}

Mina, IG, Kim, H, Kim, I, Park, S, Choi, K , Jackson, TN, Tutwiler, RL & Trolier-McKinstry, S 2007, High frequency piezoelectric MEMS devices. in 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF., 4393375, IEEE International Symposium on Applications of Ferroelectrics, pp. 700-701, 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF, Nara-city, Japan, 5/27/07. https://doi.org/10.1109/ISAF.2007.4393375

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AU - Tutwiler, R. L.

AU - Trolier-McKinstry, S.

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N2 - High frequency ultrasound array transducers are being explored for high resolution imaging systems. This increase in resolution is made possible by enabling a simultaneous increase in operating frequency (50 MHz to about 1GHz) and close-coupling of the electrical circuitry. Several different processing methods are being explored to fabricate array transducers. In one implementation, the piezoelectric transducer is prepared by mist deposition of PbZr0.52Ti0.48O3 (PZT) films over Ni posts. In addition, a xylophone bar transducer has also been prototyped, again using thin film PZT as the active piezoelectric layer. Because the drive voltages of these transducers are low, close coupling of the electrical circuitry is possible. A CMOS transceiver for a 9 element-array has been fabricated in 0.35 μm process technology. The first generation CMOS transceiver chip contains beamforming electronics, receiver circuitry, and analog to digital converters with 27 Kbyte on-chip buffer memory.

AB - High frequency ultrasound array transducers are being explored for high resolution imaging systems. This increase in resolution is made possible by enabling a simultaneous increase in operating frequency (50 MHz to about 1GHz) and close-coupling of the electrical circuitry. Several different processing methods are being explored to fabricate array transducers. In one implementation, the piezoelectric transducer is prepared by mist deposition of PbZr0.52Ti0.48O3 (PZT) films over Ni posts. In addition, a xylophone bar transducer has also been prototyped, again using thin film PZT as the active piezoelectric layer. Because the drive voltages of these transducers are low, close coupling of the electrical circuitry is possible. A CMOS transceiver for a 9 element-array has been fabricated in 0.35 μm process technology. The first generation CMOS transceiver chip contains beamforming electronics, receiver circuitry, and analog to digital converters with 27 Kbyte on-chip buffer memory.

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High frequency piezoelectric MEMS devices

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