TY - JOUR
T1 - High frequency piezoelectric MEMS ultrasound transducers
AU - Mina, Ioanna G.
AU - Kim, Hyunsoo
AU - Kim, Insoo
AU - Park, Sung Kyu
AU - Choi, Kyusun
AU - Jackson, Thomas N.
AU - Tutwiler, Richard L.
AU - Trolier-McKinstry, Susan
N1 - Funding Information:
Manuscript received June 30, 2007; accepted October 3, 2007. Support for this research was provided by the National Science Foundation (via the MRSEC), the Materials Research Institute of Penn State, and the Center for Dielectric Studies (via the Ben Franklin Center of Excellence on Piezoelectric Materials and Devices).
PY - 2007/12
Y1 - 2007/12
N2 - High-frequency ultrasound array transducers using piezoelectric thin films on larger structures are being developed for high-resolution imaging systems. The increase in resolution is achieved by a simultaneous increase in operating frequency (30 MHz to about 1 GHz) and close coupling of the electronic circuitry. Two different processing methods were explored to fabricate array transducers. In one implementation, a xylophone bar transducer was prototyped, using thin film PbZr0.52Ti0.48O3 (PZT) as the active piezoelectric layer. In the other, the piezoelectric transducer was prepared by mist deposition of PZT films over electroplated Ni posts. Because the PZT films are excited through the film thickness, the drive voltages of these transducers are low, and close coupling of the electronic circuitry is possible. A complementary metal-oxide-semiconductor (CMOS) transceiver chip for a 16-element array was fabricated in 0.35-pm process technology. The ultrasound front-end chip contains beam-forming electronics, receiver circuitry, and analog-to-digital converters with 3-Kbyte on-chip buffer memory.
AB - High-frequency ultrasound array transducers using piezoelectric thin films on larger structures are being developed for high-resolution imaging systems. The increase in resolution is achieved by a simultaneous increase in operating frequency (30 MHz to about 1 GHz) and close coupling of the electronic circuitry. Two different processing methods were explored to fabricate array transducers. In one implementation, a xylophone bar transducer was prototyped, using thin film PbZr0.52Ti0.48O3 (PZT) as the active piezoelectric layer. In the other, the piezoelectric transducer was prepared by mist deposition of PZT films over electroplated Ni posts. Because the PZT films are excited through the film thickness, the drive voltages of these transducers are low, and close coupling of the electronic circuitry is possible. A complementary metal-oxide-semiconductor (CMOS) transceiver chip for a 16-element array was fabricated in 0.35-pm process technology. The ultrasound front-end chip contains beam-forming electronics, receiver circuitry, and analog-to-digital converters with 3-Kbyte on-chip buffer memory.
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U2 - 10.1109/TUFFC.2007.555
DO - 10.1109/TUFFC.2007.555
M3 - Article
C2 - 18276533
AN - SCOPUS:40649097530
SN - 0885-3010
VL - 54
SP - 2422
EP - 2429
JO - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
JF - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
IS - 12
M1 - 4430019
ER -