High Mobility and Drive Current ZnO Thin Film Transistors

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Thin film transistors (TFTs) are widely utilized in the display industry as select devices for pixel data and also have potential for 3D ICs and for flexible and large area electronic applications. Recently, oxide semiconductors such as indium gallium zinc oxide (IGZO) and zinc oxide (ZnO) have gained interest because they can provide improved mobility and stability compared to amorphous silicon and reduced manufacturing cost compared to polysilicon. ZnO TFTs with field-effect mobility > 100\mathrm{cm}^{2}/\mathrm{V}\cdot \mathrm{s} have been demonstrated,[1] but these devices were fabricated using pulsed laser deposition (PLD), which may limit large-area and low-cost applications. In contrast to PLD, plasma-enhanced atomic layer deposition (PEALD) is an attractive deposition technique for high-volume manufacturing of oxide semiconductor devices and especially for ZnO. In this work, we have demonstrated a simple process modification using a NO plasma based passivation layer that improves the performance of PEALD ZnO TFTs. ZnO TFTs with 5\ \mu \mathrm{m} channel lengths, PEALD ZnO active layer, and NO plasma-based PEALD AlO passivation layer exhibit drive currents > 250\mathrm{mA}/\mathrm{mm} and field-effect mobilities > 80\ \mathrm{cm}^{2}/\mathrm{V}\cdot\mathrm{s}.

Original languageEnglish (US)
Title of host publication2019 Device Research Conference, DRC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)9781728121123
StatePublished - Jun 2019
Event2019 Device Research Conference, DRC 2019 - Ann Arbor, United States
Duration: Jun 23 2019Jun 26 2019

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Conference2019 Device Research Conference, DRC 2019
Country/TerritoryUnited States
CityAnn Arbor

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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