High-mobility, low voltage organic thin film transistors

David J. Gundlach; Hagen Klauk; Chris D. Sheraw; Chung Chen Kuo; Jiunn Ru Huang; Thomas Nelson Jackson

High-mobility, low voltage organic thin film transistors

David J. Gundlach, Hagen Klauk, Chris D. Sheraw, Chung Chen Kuo, Jiunn Ru Huang, Thomas Nelson Jackson

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have fabricated photolitographically defined organic thin film transistors (TFTs) on glass or plastic substrates with carrier field-effect mobility larger than 1 cm²/V-s, using the organic semiconductor pentacene as the active layer. In addition to high carrier mobility, devices on glass substrates have subthreshold slope as low as 0.4 V/decade. TFT performance for devices on both substrate types was extracted at low bias (less than -30 V). These results are the best reported to date for organic TFTs on polymeric and glass substrates.

Original language	English (US)
Pages (from-to)	111-114
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1999
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: Dec 5 1999 → Dec 8 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Cite this

@article{081141663d5845ab82f9204b72f4da3c,

title = "High-mobility, low voltage organic thin film transistors",

abstract = "We have fabricated photolitographically defined organic thin film transistors (TFTs) on glass or plastic substrates with carrier field-effect mobility larger than 1 cm2/V-s, using the organic semiconductor pentacene as the active layer. In addition to high carrier mobility, devices on glass substrates have subthreshold slope as low as 0.4 V/decade. TFT performance for devices on both substrate types was extracted at low bias (less than -30 V). These results are the best reported to date for organic TFTs on polymeric and glass substrates.",

author = "Gundlach, {David J.} and Hagen Klauk and Sheraw, {Chris D.} and Kuo, {Chung Chen} and Huang, {Jiunn Ru} and Jackson, {Thomas Nelson}",

year = "1999",

language = "English (US)",

pages = "111--114",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1999 IEEE International Devices Meeting (IEDM) ; Conference date: 05-12-1999 Through 08-12-1999",

}

TY - JOUR

T1 - High-mobility, low voltage organic thin film transistors

AU - Gundlach, David J.

AU - Klauk, Hagen

AU - Sheraw, Chris D.

AU - Kuo, Chung Chen

AU - Huang, Jiunn Ru

AU - Jackson, Thomas Nelson

PY - 1999

Y1 - 1999

N2 - We have fabricated photolitographically defined organic thin film transistors (TFTs) on glass or plastic substrates with carrier field-effect mobility larger than 1 cm2/V-s, using the organic semiconductor pentacene as the active layer. In addition to high carrier mobility, devices on glass substrates have subthreshold slope as low as 0.4 V/decade. TFT performance for devices on both substrate types was extracted at low bias (less than -30 V). These results are the best reported to date for organic TFTs on polymeric and glass substrates.

AB - We have fabricated photolitographically defined organic thin film transistors (TFTs) on glass or plastic substrates with carrier field-effect mobility larger than 1 cm2/V-s, using the organic semiconductor pentacene as the active layer. In addition to high carrier mobility, devices on glass substrates have subthreshold slope as low as 0.4 V/decade. TFT performance for devices on both substrate types was extracted at low bias (less than -30 V). These results are the best reported to date for organic TFTs on polymeric and glass substrates.

UR - http://www.scopus.com/inward/record.url?scp=0033314079&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033314079&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033314079

SN - 0163-1918

SP - 111

EP - 114

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

High-mobility, low voltage organic thin film transistors

Abstract

All Science Journal Classification (ASJC) codes

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