High-mobility pentacene-based organic thin film transistors

Y. Y. Lin; D. J. Gundlach; S. F. Nelson; Thomas Nelson Jackson

High-mobility pentacene-based organic thin film transistors

Y. Y. Lin, D. J. Gundlach, S. F. Nelson, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Pentacene based thin film transistors (TFT), with high field-effect mobility and low threshold voltage and subthreshold slope, are fabricated using heavily doped silicon as substrate and gate electrode, with thermally grown silicon dioxide as the TFT gate dielectric. The fabricated organic TFTs with two types of source-drain contacts, namely, a top source-drain contact pentacene TFT with octadecyltrichlorosilane (OTS) deposited on the SiO₂ gate dielectric before pentacene deposition and a pentacene TFT with pre-patterned source-drain contacts and OTS deposited prior to pentacene deposition, are studied. The I_D-V_DS characteristics, field-effect mobility, current on/off ratio, and subtreshold slope for the pentacene organic TFTs are presented.

Original language	English (US)
Title of host publication	Annual Device Research Conference Digest
Publisher	IEEE
Pages	60-61
Number of pages	2
State	Published - 1997
Event	Proceedings of the 1997 55th Annual Device Research Conference - Fort Collins, CO, USA Duration: Jun 23 1997 → Jun 25 1997

Other

Other	Proceedings of the 1997 55th Annual Device Research Conference
City	Fort Collins, CO, USA
Period	6/23/97 → 6/25/97

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@inproceedings{15cce58f981442539f9fe18fb5c57345,

title = "High-mobility pentacene-based organic thin film transistors",

abstract = "Pentacene based thin film transistors (TFT), with high field-effect mobility and low threshold voltage and subthreshold slope, are fabricated using heavily doped silicon as substrate and gate electrode, with thermally grown silicon dioxide as the TFT gate dielectric. The fabricated organic TFTs with two types of source-drain contacts, namely, a top source-drain contact pentacene TFT with octadecyltrichlorosilane (OTS) deposited on the SiO2 gate dielectric before pentacene deposition and a pentacene TFT with pre-patterned source-drain contacts and OTS deposited prior to pentacene deposition, are studied. The ID-VDS characteristics, field-effect mobility, current on/off ratio, and subtreshold slope for the pentacene organic TFTs are presented.",

author = "Lin, {Y. Y.} and Gundlach, {D. J.} and Nelson, {S. F.} and Jackson, {Thomas Nelson}",

year = "1997",

language = "English (US)",

pages = "60--61",

booktitle = "Annual Device Research Conference Digest",

publisher = "IEEE",

note = "Proceedings of the 1997 55th Annual Device Research Conference ; Conference date: 23-06-1997 Through 25-06-1997",

}

TY - GEN

T1 - High-mobility pentacene-based organic thin film transistors

AU - Lin, Y. Y.

AU - Gundlach, D. J.

AU - Nelson, S. F.

AU - Jackson, Thomas Nelson

PY - 1997

Y1 - 1997

N2 - Pentacene based thin film transistors (TFT), with high field-effect mobility and low threshold voltage and subthreshold slope, are fabricated using heavily doped silicon as substrate and gate electrode, with thermally grown silicon dioxide as the TFT gate dielectric. The fabricated organic TFTs with two types of source-drain contacts, namely, a top source-drain contact pentacene TFT with octadecyltrichlorosilane (OTS) deposited on the SiO2 gate dielectric before pentacene deposition and a pentacene TFT with pre-patterned source-drain contacts and OTS deposited prior to pentacene deposition, are studied. The ID-VDS characteristics, field-effect mobility, current on/off ratio, and subtreshold slope for the pentacene organic TFTs are presented.

AB - Pentacene based thin film transistors (TFT), with high field-effect mobility and low threshold voltage and subthreshold slope, are fabricated using heavily doped silicon as substrate and gate electrode, with thermally grown silicon dioxide as the TFT gate dielectric. The fabricated organic TFTs with two types of source-drain contacts, namely, a top source-drain contact pentacene TFT with octadecyltrichlorosilane (OTS) deposited on the SiO2 gate dielectric before pentacene deposition and a pentacene TFT with pre-patterned source-drain contacts and OTS deposited prior to pentacene deposition, are studied. The ID-VDS characteristics, field-effect mobility, current on/off ratio, and subtreshold slope for the pentacene organic TFTs are presented.

UR - http://www.scopus.com/inward/record.url?scp=0030718364&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030718364&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0030718364

SP - 60

EP - 61

BT - Annual Device Research Conference Digest

PB - IEEE

T2 - Proceedings of the 1997 55th Annual Device Research Conference

Y2 - 23 June 1997 through 25 June 1997

ER -

High-mobility pentacene-based organic thin film transistors

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