High-mobility pentacene-based organic thin film transistors

Y. Y. Lin, D. J. Gundlach, S. F. Nelson, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations


Pentacene based thin film transistors (TFT), with high field-effect mobility and low threshold voltage and subthreshold slope, are fabricated using heavily doped silicon as substrate and gate electrode, with thermally grown silicon dioxide as the TFT gate dielectric. The fabricated organic TFTs with two types of source-drain contacts, namely, a top source-drain contact pentacene TFT with octadecyltrichlorosilane (OTS) deposited on the SiO2 gate dielectric before pentacene deposition and a pentacene TFT with pre-patterned source-drain contacts and OTS deposited prior to pentacene deposition, are studied. The ID-VDS characteristics, field-effect mobility, current on/off ratio, and subtreshold slope for the pentacene organic TFTs are presented.

Original languageEnglish (US)
Title of host publicationAnnual Device Research Conference Digest
Number of pages2
StatePublished - 1997
EventProceedings of the 1997 55th Annual Device Research Conference - Fort Collins, CO, USA
Duration: Jun 23 1997Jun 25 1997


OtherProceedings of the 1997 55th Annual Device Research Conference
CityFort Collins, CO, USA

All Science Journal Classification (ASJC) codes

  • Engineering(all)


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