High mobility tri-layer a-Si:H thin-film transistors with ultrathin active layer

Daniel B. Thomasson; Thomas N. Jackson

doi:10.1109/55.605452

High mobility tri-layer a-Si:H thin-film transistors with ultrathin active layer

Daniel B. Thomasson, Thomas N. Jackson

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We show that hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) with active layer thickness of 13 nm perform better for display applications than devices with thicker SO-nm active layers. A direct comparison of a-Si:H TFT's fabricated using an i-stopper TFT structure shows that ultrathin active layers significantly improve the device characteristics. For a 5-μm channel length TFT, the linear region (V_DS = 0.1 V) and saturation region mobilities increase from 0.4 cm²/V·s and 0.7 cm²/V·s for a 50-nm thick active layer a-Si:H device to 0.7 cm²/V·s and 1.2 cm²/V·s for a 13-nm thick active layer a-Si:H layer device fabricated with otherwise identical geometry and processing.

Original language	English (US)
Pages (from-to)	397-399
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	18
Issue number	8
DOIs	https://doi.org/10.1109/55.605452
State	Published - Aug 1997

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.605452

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@article{536d26d12e764c95aca5313dde0b8c60,

title = "High mobility tri-layer a-Si:H thin-film transistors with ultrathin active layer",

abstract = "We show that hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) with active layer thickness of 13 nm perform better for display applications than devices with thicker SO-nm active layers. A direct comparison of a-Si:H TFT's fabricated using an i-stopper TFT structure shows that ultrathin active layers significantly improve the device characteristics. For a 5-μm channel length TFT, the linear region (VDS = 0.1 V) and saturation region mobilities increase from 0.4 cm2/V·s and 0.7 cm2/V·s for a 50-nm thick active layer a-Si:H device to 0.7 cm2/V·s and 1.2 cm2/V·s for a 13-nm thick active layer a-Si:H layer device fabricated with otherwise identical geometry and processing.",

author = "Thomasson, {Daniel B.} and Jackson, {Thomas N.}",

note = "Funding Information: Manuscript received March 7, 1997; revised April 4, 1997. This work was supported by the Defense Advanced Research Projects Agency under DARPA Grant F33615-94-1-1464. The authors are with the Department of Electrical Engineering, Penn State University, University Park, PA 16802 USA. Publisher Item Identifier S 0741-3106(97)05841-2.",

year = "1997",

month = aug,

doi = "10.1109/55.605452",

language = "English (US)",

volume = "18",

pages = "397--399",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - High mobility tri-layer a-Si:H thin-film transistors with ultrathin active layer

AU - Thomasson, Daniel B.

AU - Jackson, Thomas N.

N1 - Funding Information: Manuscript received March 7, 1997; revised April 4, 1997. This work was supported by the Defense Advanced Research Projects Agency under DARPA Grant F33615-94-1-1464. The authors are with the Department of Electrical Engineering, Penn State University, University Park, PA 16802 USA. Publisher Item Identifier S 0741-3106(97)05841-2.

PY - 1997/8

Y1 - 1997/8

N2 - We show that hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) with active layer thickness of 13 nm perform better for display applications than devices with thicker SO-nm active layers. A direct comparison of a-Si:H TFT's fabricated using an i-stopper TFT structure shows that ultrathin active layers significantly improve the device characteristics. For a 5-μm channel length TFT, the linear region (VDS = 0.1 V) and saturation region mobilities increase from 0.4 cm2/V·s and 0.7 cm2/V·s for a 50-nm thick active layer a-Si:H device to 0.7 cm2/V·s and 1.2 cm2/V·s for a 13-nm thick active layer a-Si:H layer device fabricated with otherwise identical geometry and processing.

AB - We show that hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) with active layer thickness of 13 nm perform better for display applications than devices with thicker SO-nm active layers. A direct comparison of a-Si:H TFT's fabricated using an i-stopper TFT structure shows that ultrathin active layers significantly improve the device characteristics. For a 5-μm channel length TFT, the linear region (VDS = 0.1 V) and saturation region mobilities increase from 0.4 cm2/V·s and 0.7 cm2/V·s for a 50-nm thick active layer a-Si:H device to 0.7 cm2/V·s and 1.2 cm2/V·s for a 13-nm thick active layer a-Si:H layer device fabricated with otherwise identical geometry and processing.

UR - http://www.scopus.com/inward/record.url?scp=0031210697&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031210697&partnerID=8YFLogxK

U2 - 10.1109/55.605452

DO - 10.1109/55.605452

M3 - Article

AN - SCOPUS:0031210697

SN - 0741-3106

VL - 18

SP - 397

EP - 399

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

ER -

High mobility tri-layer a-Si:H thin-film transistors with ultrathin active layer

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