High mobility tri-layer a-Si:H thin-film transistors with ultrathin active layer

Daniel B. Thomasson, Thomas N. Jackson

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


We show that hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) with active layer thickness of 13 nm perform better for display applications than devices with thicker SO-nm active layers. A direct comparison of a-Si:H TFT's fabricated using an i-stopper TFT structure shows that ultrathin active layers significantly improve the device characteristics. For a 5-μm channel length TFT, the linear region (VDS = 0.1 V) and saturation region mobilities increase from 0.4 cm2/V·s and 0.7 cm2/V·s for a 50-nm thick active layer a-Si:H device to 0.7 cm2/V·s and 1.2 cm2/V·s for a 13-nm thick active layer a-Si:H layer device fabricated with otherwise identical geometry and processing.

Original languageEnglish (US)
Pages (from-to)397-399
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
StatePublished - Aug 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'High mobility tri-layer a-Si:H thin-film transistors with ultrathin active layer'. Together they form a unique fingerprint.

Cite this