TY - JOUR
T1 - High Performance and Efficiency Resonant Photo-Effect-Transistor by Near-Field Nano-Strip-Controlled Organic Light Emitting Diode Gate
AU - Asare-Yeboah, Kyeiwaa
AU - Li, Qikun
AU - Jiang, Chengming
AU - He, Zhengran
AU - Bi, Sheng
AU - Liu, Yun
AU - Liu, Chuan
N1 - Funding Information:
We thank Dr. Jinhui Song for helpful discussions with different methods of this project. Dr. C. Jiang received funding from National Natural Science Foundation of China (NSFC) 51702035 and 51975101.
Publisher Copyright:
Copyright © 2020 American Chemical Society.
PY - 2020/8/20
Y1 - 2020/8/20
N2 - Phototriggered devices have attracted attention due to their exceptional characteristics, advanced multifunctionalities and unprecedented applications in optoelectronic systems. Here, we report a pioneer structural device, a resonant photoeffect-Transistor (RPET) with a functionalized nanowire (NW) charge transport channel, modulated by a near-field nanostrip organic light emitting diode (OLED) and controlled by a gate bias to realize exceptional photoelectric properties. The RPET presents high-quality nanowire channel characteristics due to tunable optical cavities manifesting strong standing wave resonance under controlled light emission. To enhance performance, methodical analyses were carried out to determine the effects of the structural design, electric field distribution and charge carrier generation on photoresponsivity when light traverses a single or multiple nanoslit masks. The developed RPET yields stable photocurrents in the 105 range and generates current on/off ratios upward of 106 under the influence of intense electromagnetic distribution, effectively lending itself to promising opportunities in fully integrated optoelectronic devices.
AB - Phototriggered devices have attracted attention due to their exceptional characteristics, advanced multifunctionalities and unprecedented applications in optoelectronic systems. Here, we report a pioneer structural device, a resonant photoeffect-Transistor (RPET) with a functionalized nanowire (NW) charge transport channel, modulated by a near-field nanostrip organic light emitting diode (OLED) and controlled by a gate bias to realize exceptional photoelectric properties. The RPET presents high-quality nanowire channel characteristics due to tunable optical cavities manifesting strong standing wave resonance under controlled light emission. To enhance performance, methodical analyses were carried out to determine the effects of the structural design, electric field distribution and charge carrier generation on photoresponsivity when light traverses a single or multiple nanoslit masks. The developed RPET yields stable photocurrents in the 105 range and generates current on/off ratios upward of 106 under the influence of intense electromagnetic distribution, effectively lending itself to promising opportunities in fully integrated optoelectronic devices.
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U2 - 10.1021/acs.jpclett.0c01642
DO - 10.1021/acs.jpclett.0c01642
M3 - Article
C2 - 32787233
AN - SCOPUS:85089768726
SN - 1948-7185
VL - 11
SP - 6526
EP - 6534
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
IS - 16
ER -