High performance field-effect transistor based on multilayer tungsten disulfide

Keyphrases

• High Performance 100%
• Field-effect Transistors 100%
• Performance Fields 100%
• Tungsten Disulfide 100%
• Two Dimensional 33%
• Room Temperature 33%
• Transistor 33%
• Temperature Effect 33%
• Schottky Barrier 33%
• Field-effect Mobility 33%
• Phonon Scattering 33%
• High Mobility 33%
• Conduction Band Edge 33%
• Charged Impurity 33%
• Impurity Density 33%
• Low Charge 33%
• Practical Devices 33%
• Low Temperature Studies 33%
• High-performance Transistors 33%
• Contact Metal 33%
• Dimensional Transitions 33%
• Impurity Levels 33%
• Thin Crystal 33%
• Shallow Impurity 33%
• Transition Metal Chalcogenides 33%
• Chalcogenide Crystals 33%

Material Science

• Field Effect Transistor 100%
• Tungsten 100%
• Transistor 66%
• Density 33%
• Schottky Barrier 33%
• Transition Metal Chalcogenides 33%