TY - GEN
T1 - High performance GaN-on-Si power switch
T2 - 69th Device Research Conference, DRC 2011
AU - Chu, Rongming
AU - Zehnder, Daniel
AU - Hughes, Brian
AU - Boutros, Karim
PY - 2011
Y1 - 2011
N2 - Field-effect transistors based on the low-cost GaN-on-Si platform are promising candidates for highefficiency power switching at high frequencies. We have reported a normally-off GaN-on-Si switch with a blocking voltage of 1200V, and a very low dynamic on-resistance [1]. For future improvement of the GaN-on-Si switching technology, it is important to understand the role of the non-insulating Si-substrate in device characteristics. In this paper, we discuss the static (DC) and dynamic (switching) characteristics of the GaN-on-Si device, focusing on the impact of bias conditions applied on the Si substrate. It was found that state-of-the-art dynamic on-resistance characteristics of the GaN-on-Si switch can be achieved by properly terminating the Si substrate potential.
AB - Field-effect transistors based on the low-cost GaN-on-Si platform are promising candidates for highefficiency power switching at high frequencies. We have reported a normally-off GaN-on-Si switch with a blocking voltage of 1200V, and a very low dynamic on-resistance [1]. For future improvement of the GaN-on-Si switching technology, it is important to understand the role of the non-insulating Si-substrate in device characteristics. In this paper, we discuss the static (DC) and dynamic (switching) characteristics of the GaN-on-Si device, focusing on the impact of bias conditions applied on the Si substrate. It was found that state-of-the-art dynamic on-resistance characteristics of the GaN-on-Si switch can be achieved by properly terminating the Si substrate potential.
UR - http://www.scopus.com/inward/record.url?scp=84880720685&partnerID=8YFLogxK
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U2 - 10.1109/DRC.2011.5994508
DO - 10.1109/DRC.2011.5994508
M3 - Conference contribution
AN - SCOPUS:84880720685
SN - 9781612842417
T3 - Device Research Conference - Conference Digest, DRC
SP - 223
EP - 224
BT - 69th Device Research Conference, DRC 2011 - Conference Digest
Y2 - 20 June 2011 through 22 June 2011
ER -