High performance GaN-on-Si power switch: Role of substrate bias in device characteristics

Rongming Chu, Daniel Zehnder, Brian Hughes, Karim Boutros

Research output: Chapter in Book/Report/Conference proceedingConference contribution

20 Scopus citations


Field-effect transistors based on the low-cost GaN-on-Si platform are promising candidates for highefficiency power switching at high frequencies. We have reported a normally-off GaN-on-Si switch with a blocking voltage of 1200V, and a very low dynamic on-resistance [1]. For future improvement of the GaN-on-Si switching technology, it is important to understand the role of the non-insulating Si-substrate in device characteristics. In this paper, we discuss the static (DC) and dynamic (switching) characteristics of the GaN-on-Si device, focusing on the impact of bias conditions applied on the Si substrate. It was found that state-of-the-art dynamic on-resistance characteristics of the GaN-on-Si switch can be achieved by properly terminating the Si substrate potential.

Original languageEnglish (US)
Title of host publication69th Device Research Conference, DRC 2011 - Conference Digest
Number of pages2
StatePublished - 2011
Event69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States
Duration: Jun 20 2011Jun 22 2011

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other69th Device Research Conference, DRC 2011
Country/TerritoryUnited States
CitySanta Barbara, CA

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


Dive into the research topics of 'High performance GaN-on-Si power switch: Role of substrate bias in device characteristics'. Together they form a unique fingerprint.

Cite this