High-performance p-type bilayer WSe₂ field effect transistors by nitric oxide doping

Keyphrases

• High Performance 100%
• Nitric Oxide 100%
• Field-effect Transistors 100%
• P-type 100%
• Oxide Doping 100%
• Bilayer WSe2 100%
• Two-dimensional Fields 75%
• Two Dimensional Materials 50%
• On-state Current 50%
• P-type Doping 50%
• Materials Research 25%
• Thermal Stability 25%
• Two Dimensional 25%
• Metal-organic Chemical Vapor Deposition (MOCVD) 25%
• Contact Resistance 25%
• Transconductance 25%
• Gate Dielectric 25%
• Complementary Metal-oxide-semiconductor Technology 25%
• Promising Solutions 25%
• Subthreshold Swing 25%
• Chemical Vapor Deposition Processes 25%
• Equivalent Oxide Thickness 25%
• Channel Length 25%
• Fully Integrated 25%
• Temporal Stability 25%
• Device Parameters 25%
• Semiconductor Applications 25%
• Complementary Metal Oxide Semiconductor 25%
• Current Ratio 25%
• Drain Voltage 25%

Engineering

• Field-Effect Transistor 100%
• Two Dimensional 100%
• 2D Material 50%
• Complementary Metal-Oxide-Semiconductor 50%
• Metal Organic Chemical Vapor Deposition 25%
• Promising Candidate 25%
• Realization 25%
• Deposition Process 25%
• Channel Length 25%
• Oxide Thickness 25%
• Gate Dielectric 25%
• Drain Voltage 25%
• Current Ratio 25%

Material Science

• Field Effect Transistor 100%
• Nitric Oxide 100%
• Two-Dimensional Material 50%
• Complementary Metal-Oxide-Semiconductor Device 50%
• Thermal Stability 25%
• Metal-Organic Chemical Vapor Deposition 25%
• Oxide Compound 25%
• Contact Resistance 25%
• Vapor Phase Deposition 25%
• Hole Mobility 25%
• Dielectric Material 25%