TY - JOUR
T1 - High Performance Vertical Resonant Photo-Effect-Transistor with an All-Around OLED-Gate for Ultra-Electromagnetic Stability
AU - Li, Qikun
AU - Bi, Sheng
AU - Asare-Yeboah, Kyeiwaa
AU - Na, Jin
AU - Liu, Yun
AU - Jiang, Chengming
AU - Song, Jinhui
N1 - Funding Information:
This project is financially supported by Science Fund for Creative Research Groups of NSFC (51621064), National Natural Science Foundation of China (NSFC, 51702035 and 51602056), Dalian University of Technology, China, (DUT16RC(3)051), and Science and Technology Project of Liaoning Province 20180540006.
Publisher Copyright:
© 2019 American Chemical Society.
PY - 2019/7/23
Y1 - 2019/7/23
N2 - The utilization of three-dimensional (3D) structures in next-generation nanodevices has been attractive due to the exceptional features they offer. These 3D structures can reduce component space and improve device properties compared to thin-film electronic components. The type of transistor applied in 3D nanodevices is one of the most widely studied components due to its rich physics and ubiquitous application. In this paper, we report a complete functionalized component, a 3D vertical resonant photo-effect-transistor (VRPET), which is realized with the functionalized nanowire current channel, asymmetric ohmic/Schottky contacts, and an ultraviolet photogate with an organic light emission diode (OLED) excitation. To enhance the VRPET performance, analyses of the design and fabrication parameters were carried out, where the focus was specifically on the relationship between light resonance and absorption. The transistor developed here can operate up to a high voltage of 16.5 V and control currents up to 50 μA with an ultrastable performance under a strong electromagnetic interference. The VRPET with excellent properties is a step toward achieving integrated photoelectric devices and corresponding applications.
AB - The utilization of three-dimensional (3D) structures in next-generation nanodevices has been attractive due to the exceptional features they offer. These 3D structures can reduce component space and improve device properties compared to thin-film electronic components. The type of transistor applied in 3D nanodevices is one of the most widely studied components due to its rich physics and ubiquitous application. In this paper, we report a complete functionalized component, a 3D vertical resonant photo-effect-transistor (VRPET), which is realized with the functionalized nanowire current channel, asymmetric ohmic/Schottky contacts, and an ultraviolet photogate with an organic light emission diode (OLED) excitation. To enhance the VRPET performance, analyses of the design and fabrication parameters were carried out, where the focus was specifically on the relationship between light resonance and absorption. The transistor developed here can operate up to a high voltage of 16.5 V and control currents up to 50 μA with an ultrastable performance under a strong electromagnetic interference. The VRPET with excellent properties is a step toward achieving integrated photoelectric devices and corresponding applications.
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U2 - 10.1021/acsnano.9b04163
DO - 10.1021/acsnano.9b04163
M3 - Article
C2 - 31247139
AN - SCOPUS:85070485381
SN - 1936-0851
VL - 13
SP - 8425
EP - 8432
JO - ACS nano
JF - ACS nano
IS - 7
ER -