High Performance Vertical Resonant Photo-Effect-Transistor with an All-Around OLED-Gate for Ultra-Electromagnetic Stability

Qikun Li, Sheng Bi, Kyeiwaa Asare-Yeboah, Jin Na, Yun Liu, Chengming Jiang, Jinhui Song

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

The utilization of three-dimensional (3D) structures in next-generation nanodevices has been attractive due to the exceptional features they offer. These 3D structures can reduce component space and improve device properties compared to thin-film electronic components. The type of transistor applied in 3D nanodevices is one of the most widely studied components due to its rich physics and ubiquitous application. In this paper, we report a complete functionalized component, a 3D vertical resonant photo-effect-transistor (VRPET), which is realized with the functionalized nanowire current channel, asymmetric ohmic/Schottky contacts, and an ultraviolet photogate with an organic light emission diode (OLED) excitation. To enhance the VRPET performance, analyses of the design and fabrication parameters were carried out, where the focus was specifically on the relationship between light resonance and absorption. The transistor developed here can operate up to a high voltage of 16.5 V and control currents up to 50 μA with an ultrastable performance under a strong electromagnetic interference. The VRPET with excellent properties is a step toward achieving integrated photoelectric devices and corresponding applications.

Original languageEnglish (US)
Pages (from-to)8425-8432
Number of pages8
JournalACS nano
Volume13
Issue number7
DOIs
StatePublished - Jul 23 2019

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy

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