High power photodiode wafer bonded to si using au with improved responsivity and output power

Ning Li, Hao Chen, Ning Duan, Mingguo Liu, Stephane Demiguel, Rubin Sidhu, Archie L. Holmes, J. C. Campbell

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


High power photodiodes wafer bonded to Si using a gold intermediate layer were demonstrated. A fabricated 20-mum-diameter photodiode exhibited a bandwidth of ∼18 GHz, a large-signal saturation-current of ∼50 mA, and a peak responsivity of ∼1 A/W. Both the responsivity and the saturation current of the Au-bonded photodiode were improved compared to the photodiode with the same structure on InP substrate.

Original languageEnglish (US)
Pages (from-to)2526-2528
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number23
StatePublished - Dec 1 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this