High power photodiode wafer bonded to si using au with improved responsivity and output power

Ning Li; Hao Chen; Ning Duan; Mingguo Liu; Stephane Demiguel; Rubin Sidhu; Archie L. Holmes; J. C. Campbell

doi:10.1109/LPT.2006.887209

High power photodiode wafer bonded to si using au with improved responsivity and output power

Ning Li, Hao Chen, Ning Duan, Mingguo Liu, Stephane Demiguel, Rubin Sidhu, Archie L. Holmes, J. C. Campbell

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

High power photodiodes wafer bonded to Si using a gold intermediate layer were demonstrated. A fabricated 20-mum-diameter photodiode exhibited a bandwidth of ∼18 GHz, a large-signal saturation-current of ∼50 mA, and a peak responsivity of ∼1 A/W. Both the responsivity and the saturation current of the Au-bonded photodiode were improved compared to the photodiode with the same structure on InP substrate.

Original language	English (US)
Pages (from-to)	2526-2528
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	23
DOIs	https://doi.org/10.1109/LPT.2006.887209
State	Published - Dec 1 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2006.887209

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abstract = "High power photodiodes wafer bonded to Si using a gold intermediate layer were demonstrated. A fabricated 20-mum-diameter photodiode exhibited a bandwidth of ∼18 GHz, a large-signal saturation-current of ∼50 mA, and a peak responsivity of ∼1 A/W. Both the responsivity and the saturation current of the Au-bonded photodiode were improved compared to the photodiode with the same structure on InP substrate.",

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T1 - High power photodiode wafer bonded to si using au with improved responsivity and output power

AU - Li, Ning

AU - Chen, Hao

AU - Duan, Ning

AU - Liu, Mingguo

AU - Demiguel, Stephane

AU - Sidhu, Rubin

AU - Holmes, Archie L.

AU - Campbell, J. C.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - High power photodiodes wafer bonded to Si using a gold intermediate layer were demonstrated. A fabricated 20-mum-diameter photodiode exhibited a bandwidth of ∼18 GHz, a large-signal saturation-current of ∼50 mA, and a peak responsivity of ∼1 A/W. Both the responsivity and the saturation current of the Au-bonded photodiode were improved compared to the photodiode with the same structure on InP substrate.

AB - High power photodiodes wafer bonded to Si using a gold intermediate layer were demonstrated. A fabricated 20-mum-diameter photodiode exhibited a bandwidth of ∼18 GHz, a large-signal saturation-current of ∼50 mA, and a peak responsivity of ∼1 A/W. Both the responsivity and the saturation current of the Au-bonded photodiode were improved compared to the photodiode with the same structure on InP substrate.

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 23

ER -

High power photodiode wafer bonded to si using au with improved responsivity and output power

Abstract

All Science Journal Classification (ASJC) codes

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