High power photodiode wafer bonded to si using au with improved responsivity and output power

Ning Li; Hao Chen; Ning Duan; Mingguo Liu; Stephane Demiguel; Rubin Sidhu; Archie L. Holmes; J. C. Campbell

doi:10.1109/LPT.2006.887209

High power photodiode wafer bonded to si using au with improved responsivity and output power

Ning Li
, Hao Chen
, Ning Duan
, Mingguo Liu
, Stephane Demiguel
, Rubin Sidhu
, Archie L. Holmes
, J. C. Campbell

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

High power photodiodes wafer bonded to Si using a gold intermediate layer were demonstrated. A fabricated 20-mum-diameter photodiode exhibited a bandwidth of ∼18 GHz, a large-signal saturation-current of ∼50 mA, and a peak responsivity of ∼1 A/W. Both the responsivity and the saturation current of the Au-bonded photodiode were improved compared to the photodiode with the same structure on InP substrate.

Original language	English (US)
Pages (from-to)	2526-2528
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	23
DOIs	https://doi.org/10.1109/LPT.2006.887209
State	Published - Dec 1 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2006.887209

Cite this

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abstract = "High power photodiodes wafer bonded to Si using a gold intermediate layer were demonstrated. A fabricated 20-mum-diameter photodiode exhibited a bandwidth of ∼18 GHz, a large-signal saturation-current of ∼50 mA, and a peak responsivity of ∼1 A/W. Both the responsivity and the saturation current of the Au-bonded photodiode were improved compared to the photodiode with the same structure on InP substrate.",

author = "Ning Li and Hao Chen and Ning Duan and Mingguo Liu and Stephane Demiguel and Rubin Sidhu and Holmes, \{Archie L.\} and Campbell, \{J. C.\}",

year = "2006",

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language = "English (US)",

volume = "18",

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T1 - High power photodiode wafer bonded to si using au with improved responsivity and output power

AU - Li, Ning

AU - Chen, Hao

AU - Duan, Ning

AU - Liu, Mingguo

AU - Demiguel, Stephane

AU - Sidhu, Rubin

AU - Holmes, Archie L.

AU - Campbell, J. C.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - High power photodiodes wafer bonded to Si using a gold intermediate layer were demonstrated. A fabricated 20-mum-diameter photodiode exhibited a bandwidth of ∼18 GHz, a large-signal saturation-current of ∼50 mA, and a peak responsivity of ∼1 A/W. Both the responsivity and the saturation current of the Au-bonded photodiode were improved compared to the photodiode with the same structure on InP substrate.

AB - High power photodiodes wafer bonded to Si using a gold intermediate layer were demonstrated. A fabricated 20-mum-diameter photodiode exhibited a bandwidth of ∼18 GHz, a large-signal saturation-current of ∼50 mA, and a peak responsivity of ∼1 A/W. Both the responsivity and the saturation current of the Au-bonded photodiode were improved compared to the photodiode with the same structure on InP substrate.

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UR - https://www.scopus.com/pages/publications/33947216595#tab=citedBy

U2 - 10.1109/LPT.2006.887209

DO - 10.1109/LPT.2006.887209

M3 - Article

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EP - 2528

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 23

ER -

High power photodiode wafer bonded to si using au with improved responsivity and output power

Abstract

All Science Journal Classification (ASJC) codes

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