High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator

Cui Zu Chang; Weiwei Zhao; Duk Y. Kim; Haijun Zhang; Badih A. Assaf; Don Heiman; Shou Cheng Zhang; Chaoxing Liu; Moses H.W. Chan; Jagadeesh S. Moodera

doi:10.1038/nmat4204

High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator

Cui Zu Chang, Weiwei Zhao, Duk Y. Kim, Haijun Zhang, Badih A. Assaf, Don Heiman, Shou Cheng Zhang, Chaoxing Liu, Moses H.W. Chan, Jagadeesh S. Moodera

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833 Scopus citations

Abstract

The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two-dimensional electron layer under a strong magnetic field. The quantum anomalous Hall (QAH) effect shares a similar physical phenomenon to that of the QH effect, whereas its physical origin relies on the intrinsic spin-orbit coupling and ferromagnetism. Here, we report the experimental observation of the QAH state in V-doped (Bi,Sb) 2 Te 3 films with the zero-field longitudinal resistance down to 0.00013 ± 0.00007h/e 2 (∼3.35 ± 1.76â

Original language	English (US)
Pages (from-to)	473-477
Number of pages	5
Journal	Nature Materials
Volume	14
Issue number	5
DOIs	https://doi.org/10.1038/nmat4204
State	Published - May 1 2015

All Science Journal Classification (ASJC) codes

General Chemistry
General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator",

abstract = "The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two-dimensional electron layer under a strong magnetic field. The quantum anomalous Hall (QAH) effect shares a similar physical phenomenon to that of the QH effect, whereas its physical origin relies on the intrinsic spin-orbit coupling and ferromagnetism. Here, we report the experimental observation of the QAH state in V-doped (Bi,Sb) 2 Te 3 films with the zero-field longitudinal resistance down to 0.00013 ± 0.00007h/e 2 (∼3.35 ± 1.76{\^a}",

author = "Chang, {Cui Zu} and Weiwei Zhao and Kim, {Duk Y.} and Haijun Zhang and Assaf, {Badih A.} and Don Heiman and Zhang, {Shou Cheng} and Chaoxing Liu and Chan, {Moses H.W.} and Moodera, {Jagadeesh S.}",

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T1 - High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator

AU - Chang, Cui Zu

AU - Zhao, Weiwei

AU - Kim, Duk Y.

AU - Zhang, Haijun

AU - Assaf, Badih A.

AU - Heiman, Don

AU - Zhang, Shou Cheng

AU - Liu, Chaoxing

AU - Chan, Moses H.W.

AU - Moodera, Jagadeesh S.

PY - 2015/5/1

Y1 - 2015/5/1

N2 - The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two-dimensional electron layer under a strong magnetic field. The quantum anomalous Hall (QAH) effect shares a similar physical phenomenon to that of the QH effect, whereas its physical origin relies on the intrinsic spin-orbit coupling and ferromagnetism. Here, we report the experimental observation of the QAH state in V-doped (Bi,Sb) 2 Te 3 films with the zero-field longitudinal resistance down to 0.00013 ± 0.00007h/e 2 (∼3.35 ± 1.76â

AB - The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two-dimensional electron layer under a strong magnetic field. The quantum anomalous Hall (QAH) effect shares a similar physical phenomenon to that of the QH effect, whereas its physical origin relies on the intrinsic spin-orbit coupling and ferromagnetism. Here, we report the experimental observation of the QAH state in V-doped (Bi,Sb) 2 Te 3 films with the zero-field longitudinal resistance down to 0.00013 ± 0.00007h/e 2 (∼3.35 ± 1.76â

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High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator

Abstract

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