@article{3fe956269f1c4d61b90f3b51ef63c5f2,
title = "High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator",
abstract = "The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two-dimensional electron layer under a strong magnetic field. The quantum anomalous Hall (QAH) effect shares a similar physical phenomenon to that of the QH effect, whereas its physical origin relies on the intrinsic spin-orbit coupling and ferromagnetism. Here, we report the experimental observation of the QAH state in V-doped (Bi,Sb) 2 Te 3 films with the zero-field longitudinal resistance down to 0.00013 ± 0.00007h/e 2 (∼3.35 ± 1.76{\^a}",
author = "Chang, {Cui Zu} and Weiwei Zhao and Kim, {Duk Y.} and Haijun Zhang and Assaf, {Badih A.} and Don Heiman and Zhang, {Shou Cheng} and Chaoxing Liu and Chan, {Moses H.W.} and Moodera, {Jagadeesh S.}",
note = "Funding Information: We are grateful to P. Wei, J. Liu, L. Fu, N. Samarth, J. Jain, G. Csathy and Z. Fang for helpful discussions, and F. Katmis, W. J. Fang, C. Settens and J. Kong for technical support in characterizing the samples. This research is supported by grants from NSF (DMR-1207469), NSF (DMR-0907007), NSF(ECCS-1402738), ONR (N00014-13-1-0301), NSF (DMR-0820404, DMR-1420620, Penn State MRSEC), NSF (DMR-1103159), DOE (DE-AC02-76SF00515), DARPA (N66001-11-1-4105) and the STC Center for Integrated Quantum Materials under NSF grant DMR-1231319. Publisher Copyright: {\textcopyright} 2015 Macmillan Publishers Limited. All rights reserved.",
year = "2015",
month = may,
day = "1",
doi = "10.1038/nmat4204",
language = "English (US)",
volume = "14",
pages = "473--477",
journal = "Nature Materials",
issn = "1476-1122",
publisher = "Nature Publishing Group",
number = "5",
}