High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator

Cui Zu Chang; Weiwei Zhao; Duk Y. Kim; Haijun Zhang; Badih A. Assaf; Don Heiman; Shou Cheng Zhang; Chaoxing Liu; Moses H.W. Chan; Jagadeesh S. Moodera

doi:10.1038/nmat4204

High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator

Cui Zu Chang
, Weiwei Zhao
, Duk Y. Kim
, Haijun Zhang
, Badih A. Assaf
, Don Heiman
, Shou Cheng Zhang
, Chaoxing Liu
, Moses H.W. Chan
, Jagadeesh S. Moodera

Research output: Contribution to journal › Article › peer-review

898 Scopus citations

Abstract

The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two-dimensional electron layer under a strong magnetic field. The quantum anomalous Hall (QAH) effect shares a similar physical phenomenon to that of the QH effect, whereas its physical origin relies on the intrinsic spin-orbit coupling and ferromagnetism. Here, we report the experimental observation of the QAH state in V-doped (Bi,Sb) 2 Te 3 films with the zero-field longitudinal resistance down to 0.00013 ± 0.00007h/e 2 (∼3.35 ± 1.76â

Original language	English (US)
Pages (from-to)	473-477
Number of pages	5
Journal	Nature Materials
Volume	14
Issue number	5
DOIs	https://doi.org/10.1038/nmat4204
State	Published - May 1 2015

All Science Journal Classification (ASJC) codes

General Chemistry
General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator",

abstract = "The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two-dimensional electron layer under a strong magnetic field. The quantum anomalous Hall (QAH) effect shares a similar physical phenomenon to that of the QH effect, whereas its physical origin relies on the intrinsic spin-orbit coupling and ferromagnetism. Here, we report the experimental observation of the QAH state in V-doped (Bi,Sb) 2 Te 3 films with the zero-field longitudinal resistance down to 0.00013 ± 0.00007h/e 2 (∼3.35 ± 1.76{\^a}",

author = "Chang, \{Cui Zu\} and Weiwei Zhao and Kim, \{Duk Y.\} and Haijun Zhang and Assaf, \{Badih A.\} and Don Heiman and Zhang, \{Shou Cheng\} and Chaoxing Liu and Chan, \{Moses H.W.\} and Moodera, \{Jagadeesh S.\}",

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doi = "10.1038/nmat4204",

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AU - Chang, Cui Zu

AU - Zhao, Weiwei

AU - Kim, Duk Y.

AU - Zhang, Haijun

AU - Assaf, Badih A.

AU - Heiman, Don

AU - Zhang, Shou Cheng

AU - Liu, Chaoxing

AU - Chan, Moses H.W.

AU - Moodera, Jagadeesh S.

PY - 2015/5/1

Y1 - 2015/5/1

N2 - The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two-dimensional electron layer under a strong magnetic field. The quantum anomalous Hall (QAH) effect shares a similar physical phenomenon to that of the QH effect, whereas its physical origin relies on the intrinsic spin-orbit coupling and ferromagnetism. Here, we report the experimental observation of the QAH state in V-doped (Bi,Sb) 2 Te 3 films with the zero-field longitudinal resistance down to 0.00013 ± 0.00007h/e 2 (∼3.35 ± 1.76â

AB - The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two-dimensional electron layer under a strong magnetic field. The quantum anomalous Hall (QAH) effect shares a similar physical phenomenon to that of the QH effect, whereas its physical origin relies on the intrinsic spin-orbit coupling and ferromagnetism. Here, we report the experimental observation of the QAH state in V-doped (Bi,Sb) 2 Te 3 films with the zero-field longitudinal resistance down to 0.00013 ± 0.00007h/e 2 (∼3.35 ± 1.76â

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DO - 10.1038/nmat4204

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JO - Nature Materials

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IS - 5

ER -

High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator

Abstract

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