High-resolution dry etch patterning of PZT for piezoelectric MEMS devices

R. J. Zeto; B. J. Rod; M. Dubey; M. H. Ervin; R. C. Piekarz; Susan E. Trolier-McKinstry; T. Su; J. F. Shepard

High-resolution dry etch patterning of PZT for piezoelectric MEMS devices

R. J. Zeto, B. J. Rod, M. Dubey, M. H. Ervin, R. C. Piekarz, Susan E. Trolier-McKinstry, T. Su, J. F. Shepard

Research output: Contribution to conference › Paper › peer-review

Abstract

Dry etch patterning of lead zirconate titanate with self-aligned top and bottom platinum electrodes was demonstrated using a combination of reactive ion etching of PZT and argon ion milling of Pt. Monochlorotetrafluoroethane (HC₂ClF₄) etch gas and a Pt etch mask were employed for PZT patterning. PZT etch rates in the range 13-110nm/min were measured as a function of rf discharge power for alumina, graphite, and ardel electrode shields in a conventional parallel plate reactor. The top and bottom platinum films were patterned by argon ion milling with a photoresist etch mask which was applied at the outset of the process and left in place throughout patterning. Etched profiles of Pt(200nm)/PZT(500nm)/Pt(150nm) multilayer films were characterized by SEM and exhibited submicron definition.

Original language	English (US)
Pages	89-92
Number of pages	4
State	Published - Dec 1 1998
Event	Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) - Montreaux, Switz Duration: Aug 24 1998 → Aug 27 1998

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Other	Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI)
City	Montreaux, Switz
Period	8/24/98 → 8/27/98

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "High-resolution dry etch patterning of PZT for piezoelectric MEMS devices",

abstract = "Dry etch patterning of lead zirconate titanate with self-aligned top and bottom platinum electrodes was demonstrated using a combination of reactive ion etching of PZT and argon ion milling of Pt. Monochlorotetrafluoroethane (HC2ClF4) etch gas and a Pt etch mask were employed for PZT patterning. PZT etch rates in the range 13-110nm/min were measured as a function of rf discharge power for alumina, graphite, and ardel electrode shields in a conventional parallel plate reactor. The top and bottom platinum films were patterned by argon ion milling with a photoresist etch mask which was applied at the outset of the process and left in place throughout patterning. Etched profiles of Pt(200nm)/PZT(500nm)/Pt(150nm) multilayer films were characterized by SEM and exhibited submicron definition.",

author = "Zeto, {R. J.} and Rod, {B. J.} and M. Dubey and Ervin, {M. H.} and Piekarz, {R. C.} and Trolier-McKinstry, {Susan E.} and T. Su and Shepard, {J. F.}",

year = "1998",

month = dec,

day = "1",

language = "English (US)",

pages = "89--92",

note = "Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) ; Conference date: 24-08-1998 Through 27-08-1998",

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TY - CONF

T1 - High-resolution dry etch patterning of PZT for piezoelectric MEMS devices

AU - Zeto, R. J.

AU - Rod, B. J.

AU - Dubey, M.

AU - Ervin, M. H.

AU - Piekarz, R. C.

AU - Trolier-McKinstry, Susan E.

AU - Su, T.

AU - Shepard, J. F.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Dry etch patterning of lead zirconate titanate with self-aligned top and bottom platinum electrodes was demonstrated using a combination of reactive ion etching of PZT and argon ion milling of Pt. Monochlorotetrafluoroethane (HC2ClF4) etch gas and a Pt etch mask were employed for PZT patterning. PZT etch rates in the range 13-110nm/min were measured as a function of rf discharge power for alumina, graphite, and ardel electrode shields in a conventional parallel plate reactor. The top and bottom platinum films were patterned by argon ion milling with a photoresist etch mask which was applied at the outset of the process and left in place throughout patterning. Etched profiles of Pt(200nm)/PZT(500nm)/Pt(150nm) multilayer films were characterized by SEM and exhibited submicron definition.

AB - Dry etch patterning of lead zirconate titanate with self-aligned top and bottom platinum electrodes was demonstrated using a combination of reactive ion etching of PZT and argon ion milling of Pt. Monochlorotetrafluoroethane (HC2ClF4) etch gas and a Pt etch mask were employed for PZT patterning. PZT etch rates in the range 13-110nm/min were measured as a function of rf discharge power for alumina, graphite, and ardel electrode shields in a conventional parallel plate reactor. The top and bottom platinum films were patterned by argon ion milling with a photoresist etch mask which was applied at the outset of the process and left in place throughout patterning. Etched profiles of Pt(200nm)/PZT(500nm)/Pt(150nm) multilayer films were characterized by SEM and exhibited submicron definition.

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T2 - Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI)

Y2 - 24 August 1998 through 27 August 1998

ER -

High-resolution dry etch patterning of PZT for piezoelectric MEMS devices

Abstract

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