High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs: 29Si hyperfine spectra

J. W. Gabrys; P. M. Lenahan; W. Weber

doi:10.1016/0167-9317(93)90172-2

High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs: ²⁹Si hyperfine spectra

J. W. Gabrys, P. M. Lenahan, W. Weber

Research output: Contribution to journal › Article › peer-review

71 Scopus citations

Abstract

We use extremely high sensitivity spin dependent recombination (SDR) measurements to evaluate hot hole injection induced damage in short channel MOSFETs. Our ²⁹Si hyperfine SDR results provide a moderately precise measure of hot carrier defect electronic localization, hybridization, and (arguably) defect back bond angles. Our results futhermore provide a dramatic illustration of the power of SDR to provide detailed analytical information about individual transistors in real integrated circuits. To the best of our knowledge, our results represent the most sensitive magnetic resonance measurements of any kind ever made in solids.

Original language	English (US)
Pages (from-to)	273-276
Number of pages	4
Journal	Microelectronic Engineering
Volume	22
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(93)90172-2
State	Published - Aug 1993

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/0167-9317(93)90172-2

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@article{508a63806dde4e8995954152d545d7d3,

title = "High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs: 29Si hyperfine spectra",

abstract = "We use extremely high sensitivity spin dependent recombination (SDR) measurements to evaluate hot hole injection induced damage in short channel MOSFETs. Our 29Si hyperfine SDR results provide a moderately precise measure of hot carrier defect electronic localization, hybridization, and (arguably) defect back bond angles. Our results futhermore provide a dramatic illustration of the power of SDR to provide detailed analytical information about individual transistors in real integrated circuits. To the best of our knowledge, our results represent the most sensitive magnetic resonance measurements of any kind ever made in solids.",

author = "Gabrys, {J. W.} and Lenahan, {P. M.} and W. Weber",

year = "1993",

month = aug,

doi = "10.1016/0167-9317(93)90172-2",

language = "English (US)",

volume = "22",

pages = "273--276",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs

T2 - 29Si hyperfine spectra

AU - Gabrys, J. W.

AU - Lenahan, P. M.

AU - Weber, W.

PY - 1993/8

Y1 - 1993/8

N2 - We use extremely high sensitivity spin dependent recombination (SDR) measurements to evaluate hot hole injection induced damage in short channel MOSFETs. Our 29Si hyperfine SDR results provide a moderately precise measure of hot carrier defect electronic localization, hybridization, and (arguably) defect back bond angles. Our results futhermore provide a dramatic illustration of the power of SDR to provide detailed analytical information about individual transistors in real integrated circuits. To the best of our knowledge, our results represent the most sensitive magnetic resonance measurements of any kind ever made in solids.

AB - We use extremely high sensitivity spin dependent recombination (SDR) measurements to evaluate hot hole injection induced damage in short channel MOSFETs. Our 29Si hyperfine SDR results provide a moderately precise measure of hot carrier defect electronic localization, hybridization, and (arguably) defect back bond angles. Our results futhermore provide a dramatic illustration of the power of SDR to provide detailed analytical information about individual transistors in real integrated circuits. To the best of our knowledge, our results represent the most sensitive magnetic resonance measurements of any kind ever made in solids.

UR - http://www.scopus.com/inward/record.url?scp=0027642809&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027642809&partnerID=8YFLogxK

U2 - 10.1016/0167-9317(93)90172-2

DO - 10.1016/0167-9317(93)90172-2

M3 - Article

AN - SCOPUS:0027642809

SN - 0167-9317

VL - 22

SP - 273

EP - 276

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs: ²⁹Si hyperfine spectra

Abstract

All Science Journal Classification (ASJC) codes

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