High-Saturation-Current Charge-Compensated InGaAs-InP Uni-Traveling-Carrier Photodiode

Ning Li; Xiaowei Li; Stephane Demiguel; Xiaoguang Zheng; Joe C. Campbell; David A. Tulchins; Keith J. Williams; Takahiro D. Isshiki; Geoffrey S. Kinsey; Rengarajan Sudharsansan

doi:10.1109/LPT.2004.823773

High-Saturation-Current Charge-Compensated InGaAs-InP Uni-Traveling-Carrier Photodiode

Ning Li, Xiaowei Li, Stephane Demiguel, Xiaoguang Zheng, Joe C. Campbell, David A. Tulchins, Keith J. Williams, Takahiro D. Isshiki, Geoffrey S. Kinsey, Rengarajan Sudharsansan

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

152 Scopus citations

Abstract

Charge compensation is utilized in an InGaAs-InP uni-traveling-carrier photodiode to mitigate the space-charge effect. A 20-Aim-diameter photodiode achieved a bandwidth of 25 GHz and large-signal 1-dB compression current greater than 90 mA; the output power at 20 GHz was 20 dBm. A smaller ∼100-μm² photodiode exhibited a bandwidth of 50 GHz and large-signal 1-dB compression current greater than 50 mA. The maximum RF output power at 40 GHz was 17 dBm.

Original language	English (US)
Pages (from-to)	864-866
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	3
DOIs	https://doi.org/10.1109/LPT.2004.823773
State	Published - Mar 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2004.823773

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@article{894db8f9a198494f83a8bad1e5d7ed14,

title = "High-Saturation-Current Charge-Compensated InGaAs-InP Uni-Traveling-Carrier Photodiode",

abstract = "Charge compensation is utilized in an InGaAs-InP uni-traveling-carrier photodiode to mitigate the space-charge effect. A 20-Aim-diameter photodiode achieved a bandwidth of 25 GHz and large-signal 1-dB compression current greater than 90 mA; the output power at 20 GHz was 20 dBm. A smaller ∼100-μm2 photodiode exhibited a bandwidth of 50 GHz and large-signal 1-dB compression current greater than 50 mA. The maximum RF output power at 40 GHz was 17 dBm.",

author = "Ning Li and Xiaowei Li and Stephane Demiguel and Xiaoguang Zheng and Campbell, {Joe C.} and Tulchins, {David A.} and Williams, {Keith J.} and Isshiki, {Takahiro D.} and Kinsey, {Geoffrey S.} and Rengarajan Sudharsansan",

year = "2004",

month = mar,

doi = "10.1109/LPT.2004.823773",

language = "English (US)",

volume = "16",

pages = "864--866",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - High-Saturation-Current Charge-Compensated InGaAs-InP Uni-Traveling-Carrier Photodiode

AU - Li, Ning

AU - Li, Xiaowei

AU - Demiguel, Stephane

AU - Zheng, Xiaoguang

AU - Campbell, Joe C.

AU - Tulchins, David A.

AU - Williams, Keith J.

AU - Isshiki, Takahiro D.

AU - Kinsey, Geoffrey S.

AU - Sudharsansan, Rengarajan

PY - 2004/3

Y1 - 2004/3

N2 - Charge compensation is utilized in an InGaAs-InP uni-traveling-carrier photodiode to mitigate the space-charge effect. A 20-Aim-diameter photodiode achieved a bandwidth of 25 GHz and large-signal 1-dB compression current greater than 90 mA; the output power at 20 GHz was 20 dBm. A smaller ∼100-μm2 photodiode exhibited a bandwidth of 50 GHz and large-signal 1-dB compression current greater than 50 mA. The maximum RF output power at 40 GHz was 17 dBm.

AB - Charge compensation is utilized in an InGaAs-InP uni-traveling-carrier photodiode to mitigate the space-charge effect. A 20-Aim-diameter photodiode achieved a bandwidth of 25 GHz and large-signal 1-dB compression current greater than 90 mA; the output power at 20 GHz was 20 dBm. A smaller ∼100-μm2 photodiode exhibited a bandwidth of 50 GHz and large-signal 1-dB compression current greater than 50 mA. The maximum RF output power at 40 GHz was 17 dBm.

UR - http://www.scopus.com/inward/record.url?scp=12144291234&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=12144291234&partnerID=8YFLogxK

U2 - 10.1109/LPT.2004.823773

DO - 10.1109/LPT.2004.823773

M3 - Article

AN - SCOPUS:12144291234

SN - 1041-1135

VL - 16

SP - 864

EP - 866

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 3

ER -

High-Saturation-Current Charge-Compensated InGaAs-InP Uni-Traveling-Carrier Photodiode

Abstract

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