High-Saturation-Current Charge-Compensated InGaAs-InP Uni-Traveling-Carrier Photodiode

Ning Li, Xiaowei Li, Stephane Demiguel, Xiaoguang Zheng, Joe C. Campbell, David A. Tulchins, Keith J. Williams, Takahiro D. Isshiki, Geoffrey S. Kinsey, Rengarajan Sudharsansan

Research output: Contribution to journalArticlepeer-review

146 Scopus citations


Charge compensation is utilized in an InGaAs-InP uni-traveling-carrier photodiode to mitigate the space-charge effect. A 20-Aim-diameter photodiode achieved a bandwidth of 25 GHz and large-signal 1-dB compression current greater than 90 mA; the output power at 20 GHz was 20 dBm. A smaller ∼100-μm2 photodiode exhibited a bandwidth of 50 GHz and large-signal 1-dB compression current greater than 50 mA. The maximum RF output power at 40 GHz was 17 dBm.

Original languageEnglish (US)
Pages (from-to)864-866
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number3
StatePublished - Mar 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this