High-Saturation-Current Charge-Compensated InGaAs-InP Uni-Traveling-Carrier Photodiode

Ning Li; Xiaowei Li; Stephane Demiguel; Xiaoguang Zheng; Joe C. Campbell; David A. Tulchins; Keith J. Williams; Takahiro D. Isshiki; Geoffrey S. Kinsey; Rengarajan Sudharsansan

doi:10.1109/LPT.2004.823773

High-Saturation-Current Charge-Compensated InGaAs-InP Uni-Traveling-Carrier Photodiode

Ning Li
, Xiaowei Li
, Stephane Demiguel
, Xiaoguang Zheng
, Joe C. Campbell
, David A. Tulchins
, Keith J. Williams
, Takahiro D. Isshiki
, Geoffrey S. Kinsey
, Rengarajan Sudharsansan

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

159 Scopus citations

Abstract

Charge compensation is utilized in an InGaAs-InP uni-traveling-carrier photodiode to mitigate the space-charge effect. A 20-Aim-diameter photodiode achieved a bandwidth of 25 GHz and large-signal 1-dB compression current greater than 90 mA; the output power at 20 GHz was 20 dBm. A smaller ∼100-μm² photodiode exhibited a bandwidth of 50 GHz and large-signal 1-dB compression current greater than 50 mA. The maximum RF output power at 40 GHz was 17 dBm.

Original language	English (US)
Pages (from-to)	864-866
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	3
DOIs	https://doi.org/10.1109/LPT.2004.823773
State	Published - Mar 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2004.823773

Cite this

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title = "High-Saturation-Current Charge-Compensated InGaAs-InP Uni-Traveling-Carrier Photodiode",

abstract = "Charge compensation is utilized in an InGaAs-InP uni-traveling-carrier photodiode to mitigate the space-charge effect. A 20-Aim-diameter photodiode achieved a bandwidth of 25 GHz and large-signal 1-dB compression current greater than 90 mA; the output power at 20 GHz was 20 dBm. A smaller ∼100-μm2 photodiode exhibited a bandwidth of 50 GHz and large-signal 1-dB compression current greater than 50 mA. The maximum RF output power at 40 GHz was 17 dBm.",

author = "Ning Li and Xiaowei Li and Stephane Demiguel and Xiaoguang Zheng and Campbell, \{Joe C.\} and Tulchins, \{David A.\} and Williams, \{Keith J.\} and Isshiki, \{Takahiro D.\} and Kinsey, \{Geoffrey S.\} and Rengarajan Sudharsansan",

year = "2004",

month = mar,

doi = "10.1109/LPT.2004.823773",

language = "English (US)",

volume = "16",

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journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - High-Saturation-Current Charge-Compensated InGaAs-InP Uni-Traveling-Carrier Photodiode

AU - Li, Ning

AU - Li, Xiaowei

AU - Demiguel, Stephane

AU - Zheng, Xiaoguang

AU - Campbell, Joe C.

AU - Tulchins, David A.

AU - Williams, Keith J.

AU - Isshiki, Takahiro D.

AU - Kinsey, Geoffrey S.

AU - Sudharsansan, Rengarajan

PY - 2004/3

Y1 - 2004/3

N2 - Charge compensation is utilized in an InGaAs-InP uni-traveling-carrier photodiode to mitigate the space-charge effect. A 20-Aim-diameter photodiode achieved a bandwidth of 25 GHz and large-signal 1-dB compression current greater than 90 mA; the output power at 20 GHz was 20 dBm. A smaller ∼100-μm2 photodiode exhibited a bandwidth of 50 GHz and large-signal 1-dB compression current greater than 50 mA. The maximum RF output power at 40 GHz was 17 dBm.

AB - Charge compensation is utilized in an InGaAs-InP uni-traveling-carrier photodiode to mitigate the space-charge effect. A 20-Aim-diameter photodiode achieved a bandwidth of 25 GHz and large-signal 1-dB compression current greater than 90 mA; the output power at 20 GHz was 20 dBm. A smaller ∼100-μm2 photodiode exhibited a bandwidth of 50 GHz and large-signal 1-dB compression current greater than 50 mA. The maximum RF output power at 40 GHz was 17 dBm.

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SN - 1041-1135

VL - 16

SP - 864

EP - 866

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 3

ER -

High-Saturation-Current Charge-Compensated InGaAs-InP Uni-Traveling-Carrier Photodiode

Abstract

All Science Journal Classification (ASJC) codes

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