High-saturation-current charge-compensated InGaAs/InP uni-traveling-carrier photodiode

Ning Li; Xiaowei Li; Stephane Demiguel; Xiaoguang Zheng; Joe C. Campbell; David A. Tulchinsky; Keith J. Williams; Takahiro D. Isshiki; Geoffrey S. Kinsey; Rengarajan Sudharsansan

High-saturation-current charge-compensated InGaAs/InP uni-traveling-carrier photodiode

Ning Li, Xiaowei Li, Stephane Demiguel, Xiaoguang Zheng, Joe C. Campbell, David A. Tulchinsky, Keith J. Williams, Takahiro D. Isshiki, Geoffrey S. Kinsey, Rengarajan Sudharsansan

Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

A high-saturation-current InGaAs/InP uni-traveling-carrier photodiode with a charge-compensated collector layer was demonstrated. As such, a 16μm diameter photodiode showed an output current of 80mA and a bandwidth of 30GHz. This yields a large-signal current/bandwidth product of 2400mA·GHz.

Original language	English (US)
Pages (from-to)	790-791
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2
State	Published - 2003
Event	2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States Duration: Oct 26 2003 → Oct 30 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{66bd6638c6b7408ab1511ea73cac3dbd,

title = "High-saturation-current charge-compensated InGaAs/InP uni-traveling-carrier photodiode",

abstract = "A high-saturation-current InGaAs/InP uni-traveling-carrier photodiode with a charge-compensated collector layer was demonstrated. As such, a 16μm diameter photodiode showed an output current of 80mA and a bandwidth of 30GHz. This yields a large-signal current/bandwidth product of 2400mA·GHz.",

author = "Ning Li and Xiaowei Li and Stephane Demiguel and Xiaoguang Zheng and Campbell, {Joe C.} and Tulchinsky, {David A.} and Williams, {Keith J.} and Isshiki, {Takahiro D.} and Kinsey, {Geoffrey S.} and Rengarajan Sudharsansan",

year = "2003",

language = "English (US)",

volume = "2",

pages = "790--791",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2003 IEEE LEOS Annual Meeting Conference Proceedings ; Conference date: 26-10-2003 Through 30-10-2003",

}

TY - JOUR

T1 - High-saturation-current charge-compensated InGaAs/InP uni-traveling-carrier photodiode

AU - Li, Ning

AU - Li, Xiaowei

AU - Demiguel, Stephane

AU - Zheng, Xiaoguang

AU - Campbell, Joe C.

AU - Tulchinsky, David A.

AU - Williams, Keith J.

AU - Isshiki, Takahiro D.

AU - Kinsey, Geoffrey S.

AU - Sudharsansan, Rengarajan

PY - 2003

Y1 - 2003

N2 - A high-saturation-current InGaAs/InP uni-traveling-carrier photodiode with a charge-compensated collector layer was demonstrated. As such, a 16μm diameter photodiode showed an output current of 80mA and a bandwidth of 30GHz. This yields a large-signal current/bandwidth product of 2400mA·GHz.

AB - A high-saturation-current InGaAs/InP uni-traveling-carrier photodiode with a charge-compensated collector layer was demonstrated. As such, a 16μm diameter photodiode showed an output current of 80mA and a bandwidth of 30GHz. This yields a large-signal current/bandwidth product of 2400mA·GHz.

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UR - http://www.scopus.com/inward/citedby.url?scp=0344897559&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0344897559

SN - 1092-8081

VL - 2

SP - 790

EP - 791

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - 2003 IEEE LEOS Annual Meeting Conference Proceedings

Y2 - 26 October 2003 through 30 October 2003

ER -

High-saturation-current charge-compensated InGaAs/InP uni-traveling-carrier photodiode

Abstract

All Science Journal Classification (ASJC) codes

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