Abstract
A high-saturation-current InGaAs/InP uni-traveling-carrier photodiode with a charge-compensated collector layer was demonstrated. As such, a 16μm diameter photodiode showed an output current of 80mA and a bandwidth of 30GHz. This yields a large-signal current/bandwidth product of 2400mA·GHz.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 790-791 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 2 |
| State | Published - 2003 |
| Event | 2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States Duration: Oct 26 2003 → Oct 30 2003 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering