High-saturation-current charge-compensated InGaAs/InP uni-traveling-carrier photodiode

  • Ning Li
  • , Xiaowei Li
  • , Stephane Demiguel
  • , Xiaoguang Zheng
  • , Joe C. Campbell
  • , David A. Tulchinsky
  • , Keith J. Williams
  • , Takahiro D. Isshiki
  • , Geoffrey S. Kinsey
  • , Rengarajan Sudharsansan

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

A high-saturation-current InGaAs/InP uni-traveling-carrier photodiode with a charge-compensated collector layer was demonstrated. As such, a 16μm diameter photodiode showed an output current of 80mA and a bandwidth of 30GHz. This yields a large-signal current/bandwidth product of 2400mA·GHz.

Original languageEnglish (US)
Pages (from-to)790-791
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
StatePublished - 2003
Event2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States
Duration: Oct 26 2003Oct 30 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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