High-saturation-current InGaAs/InAlAs charge-compensated uni-traveling-carrier photodiode

Ning Li; Rubin Sidhu; Xiaowei Li; Feng Ma; Stephane Demiguel; Xiaoguang Zhen; Archie L. Holmes; Joe C. Campbell; David A. Tulchinsky; Keith J. Williams

doi:10.1002/pssa.200406847

High-saturation-current InGaAs/InAlAs charge-compensated uni-traveling-carrier photodiode

Ning Li
, Rubin Sidhu
, Xiaowei Li
, Feng Ma
, Stephane Demiguel
, Xiaoguang Zhen
, Archie L. Holmes
, Joe C. Campbell
, David A. Tulchinsky
, Keith J. Williams

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Charge compensation is utilized to reduce space charge compression in a photodiode. Here we demonstrate an InGaAs/InAlAs uni-traveling-carrier photodiode with a charge compensated InAlAs depletion layer. A bandwidth of 20 GHz and saturation current of 45 mA are demonstrated.

Original language	English (US)
Pages (from-to)	3037-3041
Number of pages	5
Journal	Physica Status Solidi (A) Applied Research
Volume	201
Issue number	13
DOIs	https://doi.org/10.1002/pssa.200406847
State	Published - Oct 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/pssa.200406847

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title = "High-saturation-current InGaAs/InAlAs charge-compensated uni-traveling-carrier photodiode",

abstract = "Charge compensation is utilized to reduce space charge compression in a photodiode. Here we demonstrate an InGaAs/InAlAs uni-traveling-carrier photodiode with a charge compensated InAlAs depletion layer. A bandwidth of 20 GHz and saturation current of 45 mA are demonstrated.",

author = "Ning Li and Rubin Sidhu and Xiaowei Li and Feng Ma and Stephane Demiguel and Xiaoguang Zhen and Holmes, \{Archie L.\} and Campbell, \{Joe C.\} and Tulchinsky, \{David A.\} and Williams, \{Keith J.\}",

year = "2004",

month = oct,

doi = "10.1002/pssa.200406847",

language = "English (US)",

volume = "201",

pages = "3037--3041",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

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TY - JOUR

T1 - High-saturation-current InGaAs/InAlAs charge-compensated uni-traveling-carrier photodiode

AU - Li, Ning

AU - Sidhu, Rubin

AU - Li, Xiaowei

AU - Ma, Feng

AU - Demiguel, Stephane

AU - Zhen, Xiaoguang

AU - Holmes, Archie L.

AU - Campbell, Joe C.

AU - Tulchinsky, David A.

AU - Williams, Keith J.

PY - 2004/10

Y1 - 2004/10

N2 - Charge compensation is utilized to reduce space charge compression in a photodiode. Here we demonstrate an InGaAs/InAlAs uni-traveling-carrier photodiode with a charge compensated InAlAs depletion layer. A bandwidth of 20 GHz and saturation current of 45 mA are demonstrated.

AB - Charge compensation is utilized to reduce space charge compression in a photodiode. Here we demonstrate an InGaAs/InAlAs uni-traveling-carrier photodiode with a charge compensated InAlAs depletion layer. A bandwidth of 20 GHz and saturation current of 45 mA are demonstrated.

UR - https://www.scopus.com/pages/publications/21144458768

UR - https://www.scopus.com/pages/publications/21144458768#tab=citedBy

U2 - 10.1002/pssa.200406847

DO - 10.1002/pssa.200406847

M3 - Article

AN - SCOPUS:21144458768

SN - 0031-8965

VL - 201

SP - 3037

EP - 3041

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 13

ER -

High-saturation-current InGaAs/InAlAs charge-compensated uni-traveling-carrier photodiode

Abstract

All Science Journal Classification (ASJC) codes

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