High-saturation-current InP-InGaAs photodiode with partially depleted absorber

Xiaowei Li; Ning Li; Xiaoguang Zheng; Stephane Demiguel; J. C. Campbell; David A. Tulchinsky; Keith J. Williams

doi:10.1109/LPT.2003.816118

High-saturation-current InP-InGaAs photodiode with partially depleted absorber

Xiaowei Li, Ning Li, Xiaoguang Zheng, Stephane Demiguel, J. C. Campbell, David A. Tulchinsky, Keith J. Williams

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

A high-saturation-current InGaAs photodiode (PD) with a partially depleted absorber is demonstrated. Optical responsivity of 0.58 A/W and over 1.1 W of dissipated electrical power is achieved. Small signal compression current of 110 and 57 mA is measured at radio-frequency bandwidths of 1 and 10 GHz, respectively. This continuous photocurrent is believed to be the highest reported value for a p-i-n InGaAs PD at these bandwidths.

Original language	English (US)
Pages (from-to)	1276-1278
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	15
Issue number	9
DOIs	https://doi.org/10.1109/LPT.2003.816118
State	Published - Sep 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2003.816118

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title = "High-saturation-current InP-InGaAs photodiode with partially depleted absorber",

abstract = "A high-saturation-current InGaAs photodiode (PD) with a partially depleted absorber is demonstrated. Optical responsivity of 0.58 A/W and over 1.1 W of dissipated electrical power is achieved. Small signal compression current of 110 and 57 mA is measured at radio-frequency bandwidths of 1 and 10 GHz, respectively. This continuous photocurrent is believed to be the highest reported value for a p-i-n InGaAs PD at these bandwidths.",

author = "Xiaowei Li and Ning Li and Xiaoguang Zheng and Stephane Demiguel and Campbell, \{J. C.\} and Tulchinsky, \{David A.\} and Williams, \{Keith J.\}",

year = "2003",

month = sep,

doi = "10.1109/LPT.2003.816118",

language = "English (US)",

volume = "15",

pages = "1276--1278",

journal = "IEEE Photonics Technology Letters",

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T1 - High-saturation-current InP-InGaAs photodiode with partially depleted absorber

AU - Li, Xiaowei

AU - Li, Ning

AU - Zheng, Xiaoguang

AU - Demiguel, Stephane

AU - Campbell, J. C.

AU - Tulchinsky, David A.

AU - Williams, Keith J.

PY - 2003/9

Y1 - 2003/9

N2 - A high-saturation-current InGaAs photodiode (PD) with a partially depleted absorber is demonstrated. Optical responsivity of 0.58 A/W and over 1.1 W of dissipated electrical power is achieved. Small signal compression current of 110 and 57 mA is measured at radio-frequency bandwidths of 1 and 10 GHz, respectively. This continuous photocurrent is believed to be the highest reported value for a p-i-n InGaAs PD at these bandwidths.

AB - A high-saturation-current InGaAs photodiode (PD) with a partially depleted absorber is demonstrated. Optical responsivity of 0.58 A/W and over 1.1 W of dissipated electrical power is achieved. Small signal compression current of 110 and 57 mA is measured at radio-frequency bandwidths of 1 and 10 GHz, respectively. This continuous photocurrent is believed to be the highest reported value for a p-i-n InGaAs PD at these bandwidths.

UR - https://www.scopus.com/pages/publications/0141674838

UR - https://www.scopus.com/inward/citedby.url?scp=0141674838&partnerID=8YFLogxK

U2 - 10.1109/LPT.2003.816118

DO - 10.1109/LPT.2003.816118

M3 - Article

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SN - 1041-1135

VL - 15

SP - 1276

EP - 1278

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 9

ER -

High-saturation-current InP-InGaAs photodiode with partially depleted absorber

Abstract

All Science Journal Classification (ASJC) codes

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