High-saturation current wide-bandwidth photodetectors

David A. Tulchinsky; Xiaowei Li; Ning Li; Stéphane Demiguel; Joe C. Campbell; Keith J. Williams

doi:10.1109/JSTQE.2004.831951

High-saturation current wide-bandwidth photodetectors

David A. Tulchinsky, Xiaowei Li, Ning Li, Stéphane Demiguel, Joe C. Campbell, Keith J. Williams

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

83 Scopus citations

Abstract

This paper describes the design and performance of two wide-bandwidth photodiode structures. The partially depleted absorber photodiode utilizes an absorbing layer consisting of both depleted and undepleted In _0.53Ga_0.47As layers. These photodiodes have achieved saturation currents (bandwidths) of >430 mA (300 MHz) and 199 mA (1 GHz) for 100-μm-diameter devices and 24 mA (48 GHz) for 100-μm² area devices. Charge compensation has also been utilized in a similar, but modified In_0.53Ga_0.47As-InP unitraveling-carrier photodiode design to predistort the electric field in the depletion region in order to mitigate space charge effects. For 20-μm-diameter photodiodes the large-signal 1-dB compression carrent and bandwidth were ∼90 mA and 25 GHz, respectively.

Original language	English (US)
Pages (from-to)	702-708
Number of pages	7
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	10
Issue number	4
DOIs	https://doi.org/10.1109/JSTQE.2004.831951
State	Published - Jul 2004

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/JSTQE.2004.831951

Cite this

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title = "High-saturation current wide-bandwidth photodetectors",

abstract = "This paper describes the design and performance of two wide-bandwidth photodiode structures. The partially depleted absorber photodiode utilizes an absorbing layer consisting of both depleted and undepleted In 0.53Ga0.47As layers. These photodiodes have achieved saturation currents (bandwidths) of >430 mA (300 MHz) and 199 mA (1 GHz) for 100-μm-diameter devices and 24 mA (48 GHz) for 100-μm2 area devices. Charge compensation has also been utilized in a similar, but modified In0.53Ga0.47As-InP unitraveling-carrier photodiode design to predistort the electric field in the depletion region in order to mitigate space charge effects. For 20-μm-diameter photodiodes the large-signal 1-dB compression carrent and bandwidth were ∼90 mA and 25 GHz, respectively.",

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AU - Li, Xiaowei

AU - Li, Ning

AU - Demiguel, Stéphane

AU - Campbell, Joe C.

AU - Williams, Keith J.

PY - 2004/7

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High-saturation current wide-bandwidth photodetectors

Abstract

All Science Journal Classification (ASJC) codes

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