High-saturation current wide-bandwidth photodetectors

David A. Tulchinsky, Xiaowei Li, Ning Li, Stéphane Demiguel, Joe C. Campbell, Keith J. Williams

Research output: Contribution to journalArticlepeer-review

83 Scopus citations

Abstract

This paper describes the design and performance of two wide-bandwidth photodiode structures. The partially depleted absorber photodiode utilizes an absorbing layer consisting of both depleted and undepleted In 0.53Ga0.47As layers. These photodiodes have achieved saturation currents (bandwidths) of >430 mA (300 MHz) and 199 mA (1 GHz) for 100-μm-diameter devices and 24 mA (48 GHz) for 100-μm2 area devices. Charge compensation has also been utilized in a similar, but modified In0.53Ga0.47As-InP unitraveling-carrier photodiode design to predistort the electric field in the depletion region in order to mitigate space charge effects. For 20-μm-diameter photodiodes the large-signal 1-dB compression carrent and bandwidth were ∼90 mA and 25 GHz, respectively.

Original languageEnglish (US)
Pages (from-to)702-708
Number of pages7
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume10
Issue number4
DOIs
StatePublished - Jul 2004

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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