High-sensitivity tracking of MOSFET damage using dynamic-mode transient measurements

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5 Scopus citations


MOSFET reliability studies have primarily been based upon the application of quasi-static analysis techniques, although MOSFETs are fully dynamical systems. Here, we present a method for the extraction of damage metrics based upon the transient response of the drain-to-source current Ids to a step input to the gate of the device. This new dynamical technique produces a measure of device degradation that is an order of magnitude more sensitive than previous methods and also allows characterization of the device in situations better matching actual operation. We are also able to track the evolution of damage to the device in real time, which makes it possible to predict the remaining time to failure.

Original languageEnglish (US)
Article number5280268
Pages (from-to)1734-1742
Number of pages9
JournalIEEE Transactions on Instrumentation and Measurement
Issue number6
StatePublished - Jun 2010

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering


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