High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region

Ning Duan, Shuling Wang, Feng Ma, Ning Li, Joe C. Campbell, Chad Wang, Larry A. Coldren

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A separate absorption, charge, and multiplication In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode with an impact-ionization-engineered multiplication region is reported. By implementing an electric field gradient in the multiplication region, better control of impact-ionization can be achieved. Gain-bandwidth product of 160 GHz and excess noise factor with an equivalent k value of 0.1 are demonstrated.

Original languageEnglish (US)
Pages (from-to)1719-1721
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number8
StatePublished - Aug 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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