High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region

Ning Duan; Shuling Wang; Feng Ma; Ning Li; Joe C. Campbell; Chad Wang; Larry A. Coldren

doi:10.1109/LPT.2005.851903

High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region

Ning Duan
, Shuling Wang
, Feng Ma
, Ning Li
, Joe C. Campbell
, Chad Wang
, Larry A. Coldren

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

A separate absorption, charge, and multiplication In_0.53Ga_0.47As-In_0.52Al_0.48As avalanche photodiode with an impact-ionization-engineered multiplication region is reported. By implementing an electric field gradient in the multiplication region, better control of impact-ionization can be achieved. Gain-bandwidth product of 160 GHz and excess noise factor with an equivalent k value of 0.1 are demonstrated.

Original language	English (US)
Pages (from-to)	1719-1721
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	17
Issue number	8
DOIs	https://doi.org/10.1109/LPT.2005.851903
State	Published - Aug 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2005.851903

Cite this

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title = "High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region",

abstract = "A separate absorption, charge, and multiplication In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode with an impact-ionization-engineered multiplication region is reported. By implementing an electric field gradient in the multiplication region, better control of impact-ionization can be achieved. Gain-bandwidth product of 160 GHz and excess noise factor with an equivalent k value of 0.1 are demonstrated.",

author = "Ning Duan and Shuling Wang and Feng Ma and Ning Li and Campbell, \{Joe C.\} and Chad Wang and Coldren, \{Larry A.\}",

year = "2005",

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volume = "17",

pages = "1719--1721",

journal = "IEEE Photonics Technology Letters",

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T1 - High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region

AU - Duan, Ning

AU - Wang, Shuling

AU - Ma, Feng

AU - Li, Ning

AU - Campbell, Joe C.

AU - Wang, Chad

AU - Coldren, Larry A.

PY - 2005/8

Y1 - 2005/8

N2 - A separate absorption, charge, and multiplication In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode with an impact-ionization-engineered multiplication region is reported. By implementing an electric field gradient in the multiplication region, better control of impact-ionization can be achieved. Gain-bandwidth product of 160 GHz and excess noise factor with an equivalent k value of 0.1 are demonstrated.

AB - A separate absorption, charge, and multiplication In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode with an impact-ionization-engineered multiplication region is reported. By implementing an electric field gradient in the multiplication region, better control of impact-ionization can be achieved. Gain-bandwidth product of 160 GHz and excess noise factor with an equivalent k value of 0.1 are demonstrated.

UR - https://www.scopus.com/pages/publications/23844460174

UR - https://www.scopus.com/pages/publications/23844460174#tab=citedBy

U2 - 10.1109/LPT.2005.851903

DO - 10.1109/LPT.2005.851903

M3 - Article

AN - SCOPUS:23844460174

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 8

ER -

High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region

Abstract

All Science Journal Classification (ASJC) codes

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