High-speed, enhancement-mode GaN power switch with regrown n+ GaN ohmic contacts and staircase field plates

David F. Brown; Keisuke Shinohara; Andrea L. Corrion; Rongming Chu; Adam Williams; Joel C. Wong; Ivan Alvarado-Rodriguez; Robert Grabar; Michael Johnson; Colleen M. Butler; Dayward Santos; Shawn D. Burnham; John F. Robinson; Daniel Zehnder; Samuel Jungjin Kim; Thomas C. Oh; Miroslav Micovic

doi:10.1109/LED.2013.2273172

High-speed, enhancement-mode GaN power switch with regrown n+ GaN ohmic contacts and staircase field plates

David F. Brown
, Keisuke Shinohara
, Andrea L. Corrion
, Rongming Chu
, Adam Williams
, Joel C. Wong
, Ivan Alvarado-Rodriguez
, Robert Grabar
, Michael Johnson
, Colleen M. Butler
, Dayward Santos
, Shawn D. Burnham
, John F. Robinson
, Daniel Zehnder
, Samuel Jungjin Kim
, Thomas C. Oh
, Miroslav Micovic

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

We report a novel GaN heterojunction field-effect transistor device that incorporates vertically scaled epilayers, a nanoscale gate with integrated staircase-shaped field plates, and regrown ohmic contacts. This device technology has an unprecedented combination of high breakdown (176 V), low ON-resistance (1.2 ωmm), enhancement-mode operation (V_TH=+0.35 V, and excellent high-frequency performance (f_T/f_max=50/ 120 GHz), which enables new applications as a high-frequency power switch or a microwave power amplifier. The gate design manages the electric field at the drain edge of the gate, which mitigates dynamic ON-resistance degradation.

Original language	English (US)
Article number	6574209
Pages (from-to)	1118-1120
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	9
DOIs	https://doi.org/10.1109/LED.2013.2273172
State	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2013.2273172

Cite this

Brown, D. F., Shinohara, K., Corrion, A. L., Chu, R., Williams, A., Wong, J. C., Alvarado-Rodriguez, I., Grabar, R., Johnson, M., Butler, C. M., Santos, D., Burnham, S. D., Robinson, J. F., Zehnder, D., Kim, S. J., Oh, T. C., & Micovic, M. (2013). High-speed, enhancement-mode GaN power switch with regrown n+ GaN ohmic contacts and staircase field plates. IEEE Electron Device Letters, 34(9), 1118-1120. Article 6574209. https://doi.org/10.1109/LED.2013.2273172

@article{3ce756d0bf0b4d259fc44fdd8312eb3e,

title = "High-speed, enhancement-mode GaN power switch with regrown n+ GaN ohmic contacts and staircase field plates",

abstract = "We report a novel GaN heterojunction field-effect transistor device that incorporates vertically scaled epilayers, a nanoscale gate with integrated staircase-shaped field plates, and regrown ohmic contacts. This device technology has an unprecedented combination of high breakdown (176 V), low ON-resistance (1.2 ωmm), enhancement-mode operation (VTH=+0.35 V, and excellent high-frequency performance (fT/fmax=50/ 120 GHz), which enables new applications as a high-frequency power switch or a microwave power amplifier. The gate design manages the electric field at the drain edge of the gate, which mitigates dynamic ON-resistance degradation.",

author = "Brown, \{David F.\} and Keisuke Shinohara and Corrion, \{Andrea L.\} and Rongming Chu and Adam Williams and Wong, \{Joel C.\} and Ivan Alvarado-Rodriguez and Robert Grabar and Michael Johnson and Butler, \{Colleen M.\} and Dayward Santos and Burnham, \{Shawn D.\} and Robinson, \{John F.\} and Daniel Zehnder and Kim, \{Samuel Jungjin\} and Oh, \{Thomas C.\} and Miroslav Micovic",

year = "2013",

doi = "10.1109/LED.2013.2273172",

language = "English (US)",

volume = "34",

pages = "1118--1120",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

Brown, DF, Shinohara, K, Corrion, AL, Chu, R, Williams, A, Wong, JC, Alvarado-Rodriguez, I, Grabar, R, Johnson, M, Butler, CM, Santos, D, Burnham, SD, Robinson, JF, Zehnder, D, Kim, SJ, Oh, TC & Micovic, M 2013, 'High-speed, enhancement-mode GaN power switch with regrown n+ GaN ohmic contacts and staircase field plates', IEEE Electron Device Letters, vol. 34, no. 9, 6574209, pp. 1118-1120. https://doi.org/10.1109/LED.2013.2273172

TY - JOUR

T1 - High-speed, enhancement-mode GaN power switch with regrown n+ GaN ohmic contacts and staircase field plates

AU - Brown, David F.

AU - Shinohara, Keisuke

AU - Corrion, Andrea L.

AU - Chu, Rongming

AU - Williams, Adam

AU - Wong, Joel C.

AU - Alvarado-Rodriguez, Ivan

AU - Grabar, Robert

AU - Johnson, Michael

AU - Butler, Colleen M.

AU - Santos, Dayward

AU - Burnham, Shawn D.

AU - Robinson, John F.

AU - Zehnder, Daniel

AU - Kim, Samuel Jungjin

AU - Oh, Thomas C.

AU - Micovic, Miroslav

PY - 2013

Y1 - 2013

N2 - We report a novel GaN heterojunction field-effect transistor device that incorporates vertically scaled epilayers, a nanoscale gate with integrated staircase-shaped field plates, and regrown ohmic contacts. This device technology has an unprecedented combination of high breakdown (176 V), low ON-resistance (1.2 ωmm), enhancement-mode operation (VTH=+0.35 V, and excellent high-frequency performance (fT/fmax=50/ 120 GHz), which enables new applications as a high-frequency power switch or a microwave power amplifier. The gate design manages the electric field at the drain edge of the gate, which mitigates dynamic ON-resistance degradation.

AB - We report a novel GaN heterojunction field-effect transistor device that incorporates vertically scaled epilayers, a nanoscale gate with integrated staircase-shaped field plates, and regrown ohmic contacts. This device technology has an unprecedented combination of high breakdown (176 V), low ON-resistance (1.2 ωmm), enhancement-mode operation (VTH=+0.35 V, and excellent high-frequency performance (fT/fmax=50/ 120 GHz), which enables new applications as a high-frequency power switch or a microwave power amplifier. The gate design manages the electric field at the drain edge of the gate, which mitigates dynamic ON-resistance degradation.

UR - https://www.scopus.com/pages/publications/84883203018

UR - https://www.scopus.com/pages/publications/84883203018#tab=citedBy

U2 - 10.1109/LED.2013.2273172

DO - 10.1109/LED.2013.2273172

M3 - Article

AN - SCOPUS:84883203018

SN - 0741-3106

VL - 34

SP - 1118

EP - 1120

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

M1 - 6574209

ER -

High-speed, enhancement-mode GaN power switch with regrown n+ GaN ohmic contacts and staircase field plates

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this