High-speed high-current in Ga As/InP photodiode with thick depletion region

Ning Duan; Ning Li; Stephane Demiguel; Joe C. Campbell

doi:10.1109/LEOS.2005.1548068

High-speed high-current in Ga As/InP photodiode with thick depletion region

Ning Duan, Ning Li, Stephane Demiguel, Joe C. Campbell

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

We report InGaAs/InP uni-traveling-carrier photodiodes with thick depletion region with RF output power of 19dBm at 25GHz and 25dBm at 5.5GHz.

Original language	English (US)
Title of host publication	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	458-459
Number of pages	2
ISBN (Print)	0780392175, 9780780392175
DOIs	https://doi.org/10.1109/LEOS.2005.1548068
State	Published - 2005
Event	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 - Sydney, Australia Duration: Oct 22 2005 → Oct 28 2005

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2005
ISSN (Print)	1092-8081

Other

Other	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
Country/Territory	Australia
City	Sydney
Period	10/22/05 → 10/28/05

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LEOS.2005.1548068

Cite this

Duan, N., Li, N., Demiguel, S., & Campbell, J. C. (2005). High-speed high-current in Ga As/InP photodiode with thick depletion region. In 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 (pp. 458-459). Article 1548068 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2005). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LEOS.2005.1548068

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title = "High-speed high-current in Ga As/InP photodiode with thick depletion region",

abstract = "We report InGaAs/InP uni-traveling-carrier photodiodes with thick depletion region with RF output power of 19dBm at 25GHz and 25dBm at 5.5GHz.",

author = "Ning Duan and Ning Li and Stephane Demiguel and Campbell, {Joe C.}",

year = "2005",

doi = "10.1109/LEOS.2005.1548068",

language = "English (US)",

isbn = "0780392175",

series = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "458--459",

booktitle = "18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005",

address = "United States",

note = "18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 ; Conference date: 22-10-2005 Through 28-10-2005",

}

Duan, N, Li, N, Demiguel, S & Campbell, JC 2005, High-speed high-current in Ga As/InP photodiode with thick depletion region. in 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005., 1548068, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, vol. 2005, Institute of Electrical and Electronics Engineers Inc., pp. 458-459, 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005, Sydney, Australia, 10/22/05. https://doi.org/10.1109/LEOS.2005.1548068

High-speed high-current in Ga As/InP photodiode with thick depletion region. / Duan, Ning; Li, Ning; Demiguel, Stephane et al.
18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005. Institute of Electrical and Electronics Engineers Inc., 2005. p. 458-459 1548068 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - High-speed high-current in Ga As/InP photodiode with thick depletion region

AU - Duan, Ning

AU - Li, Ning

AU - Demiguel, Stephane

AU - Campbell, Joe C.

PY - 2005

Y1 - 2005

N2 - We report InGaAs/InP uni-traveling-carrier photodiodes with thick depletion region with RF output power of 19dBm at 25GHz and 25dBm at 5.5GHz.

AB - We report InGaAs/InP uni-traveling-carrier photodiodes with thick depletion region with RF output power of 19dBm at 25GHz and 25dBm at 5.5GHz.

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U2 - 10.1109/LEOS.2005.1548068

DO - 10.1109/LEOS.2005.1548068

M3 - Conference contribution

AN - SCOPUS:33751337363

SN - 0780392175

SN - 9780780392175

T3 - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

SP - 458

EP - 459

BT - 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005

Y2 - 22 October 2005 through 28 October 2005

ER -

Duan N, Li N, Demiguel S, Campbell JC. High-speed high-current in Ga As/InP photodiode with thick depletion region. In 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005. Institute of Electrical and Electronics Engineers Inc. 2005. p. 458-459. 1548068. (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS). doi: 10.1109/LEOS.2005.1548068

High-speed high-current in Ga As/InP photodiode with thick depletion region

Abstract

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All Science Journal Classification (ASJC) codes

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