High-speed high-current in Ga As/InP photodiode with thick depletion region

Ning Duan, Ning Li, Stephane Demiguel, Joe C. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

We report InGaAs/InP uni-traveling-carrier photodiodes with thick depletion region with RF output power of 19dBm at 25GHz and 25dBm at 5.5GHz.

Original languageEnglish (US)
Title of host publication18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages458-459
Number of pages2
ISBN (Print)0780392175, 9780780392175
DOIs
StatePublished - 2005
Event18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 - Sydney, Australia
Duration: Oct 22 2005Oct 28 2005

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2005
ISSN (Print)1092-8081

Other

Other18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
Country/TerritoryAustralia
CitySydney
Period10/22/0510/28/05

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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