High-Speed High-Saturation-Current InP/In 0.53Ga 0.47As Photodiode with Partially Depleted Absorber

X. Li; N. Li; X. Zheng; S. Demiguel; J. Campbell; D. Tulchinsky; K. Williams

High-Speed High-Saturation-Current InP/In _0.53Ga _0.47As Photodiode with Partially Depleted Absorber

X. Li, N. Li, X. Zheng, S. Demiguel, J. Campbell, D. Tulchinsky, K. Williams

Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

9 Scopus citations

Abstract

A high saturation current InGaAs photodiode with a partially depleted absorber (PDA) was demonstrated. To study the compression current as a function of applied bias, a 34-νm diameter device was illuminated with a 10 GHz small modulated optical signal while the average optical power from a CW laser was varied. Small-signal compression currents greater than 55, 31, and 20 mA were achieved at 10, 17 and 45 GHz, respectively. This resulted in a current-bandwidth product as high as 900 mA-GHz.

Original language	English (US)
Pages	338-339
Number of pages	2
State	Published - 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "High-Speed High-Saturation-Current InP/In 0.53Ga 0.47As Photodiode with Partially Depleted Absorber",

abstract = "A high saturation current InGaAs photodiode with a partially depleted absorber (PDA) was demonstrated. To study the compression current as a function of applied bias, a 34-νm diameter device was illuminated with a 10 GHz small modulated optical signal while the average optical power from a CW laser was varied. Small-signal compression currents greater than 55, 31, and 20 mA were achieved at 10, 17 and 45 GHz, respectively. This resulted in a current-bandwidth product as high as 900 mA-GHz.",

author = "X. Li and N. Li and X. Zheng and S. Demiguel and J. Campbell and D. Tulchinsky and K. Williams",

year = "2003",

language = "English (US)",

pages = "338--339",

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TY - CONF

T1 - High-Speed High-Saturation-Current InP/In 0.53Ga 0.47As Photodiode with Partially Depleted Absorber

AU - Li, X.

AU - Li, N.

AU - Zheng, X.

AU - Demiguel, S.

AU - Campbell, J.

AU - Tulchinsky, D.

AU - Williams, K.

PY - 2003

Y1 - 2003

N2 - A high saturation current InGaAs photodiode with a partially depleted absorber (PDA) was demonstrated. To study the compression current as a function of applied bias, a 34-νm diameter device was illuminated with a 10 GHz small modulated optical signal while the average optical power from a CW laser was varied. Small-signal compression currents greater than 55, 31, and 20 mA were achieved at 10, 17 and 45 GHz, respectively. This resulted in a current-bandwidth product as high as 900 mA-GHz.

AB - A high saturation current InGaAs photodiode with a partially depleted absorber (PDA) was demonstrated. To study the compression current as a function of applied bias, a 34-νm diameter device was illuminated with a 10 GHz small modulated optical signal while the average optical power from a CW laser was varied. Small-signal compression currents greater than 55, 31, and 20 mA were achieved at 10, 17 and 45 GHz, respectively. This resulted in a current-bandwidth product as high as 900 mA-GHz.

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UR - http://www.scopus.com/inward/citedby.url?scp=1642465557&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:1642465557

SP - 338

EP - 339

ER -

High-Speed High-Saturation-Current InP/In _0.53Ga _0.47As Photodiode with Partially Depleted Absorber

Abstract

All Science Journal Classification (ASJC) codes

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