High speed, low power electronics using Sb-based semiconductors

R. Magno; J. B. Boos; B. R. Bennett; K. Ikossi; E. R. Glaser; N. A. Papanicolaou; M. G. Anconca; B. P. Tinkham; W. Kruppa; D. Park; B. V. Shanabrook; J. Mittereder; W. Chang; K. D. Hobart; R. Bass; H. B. Dietrich; S. E. Mohney; S. Wang; J. Robinson; R. Tsai; M. Barsky; A. Gutierrez

doi:10.1109/ISCS.2003.1239962

High speed, low power electronics using Sb-based semiconductors

R. Magno, J. B. Boos, B. R. Bennett, K. Ikossi, E. R. Glaser, N. A. Papanicolaou, M. G. Anconca, B. P. Tinkham, W. Kruppa, D. Park, B. V. Shanabrook, J. Mittereder, W. Chang, K. D. Hobart, R. Bass, H. B. Dietrich, S. E. Mohney, S. Wang, J. Robinson, R. TsaiM. Barsky, A. Gutierrez

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper the current status of the design,fabrication,and characterization of Sb-based HEMTs (6.05Am) and HBTs(6.2Am) in our group will be presented.

Original language	English (US)
Title of host publication	2003 International Symposium on Compound Semiconductors, ISCS 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	175-176
Number of pages	2
ISBN (Electronic)	0780378202
DOIs	https://doi.org/10.1109/ISCS.2003.1239962
State	Published - 2003
Event	2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: Aug 25 2003 → Aug 27 2003

Publication series

Name	IEEE International Symposium on Compound Semiconductors, Proceedings
Volume	2003-January

Other

Other	2003 International Symposium on Compound Semiconductors, ISCS 2003
Country/Territory	United States
City	San Diego
Period	8/25/03 → 8/27/03

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISCS.2003.1239962

Cite this

Magno, R., Boos, J. B., Bennett, B. R., Ikossi, K., Glaser, E. R., Papanicolaou, N. A., Anconca, M. G., Tinkham, B. P., Kruppa, W., Park, D., Shanabrook, B. V., Mittereder, J., Chang, W., Hobart, K. D., Bass, R., Dietrich, H. B., Mohney, S. E., Wang, S., Robinson, J., ... Gutierrez, A. (2003). High speed, low power electronics using Sb-based semiconductors. In 2003 International Symposium on Compound Semiconductors, ISCS 2003 (pp. 175-176). Article 1239962 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239962

@inproceedings{33e38d5d6e13475096987a1583104004,

title = "High speed, low power electronics using Sb-based semiconductors",

abstract = "In this paper the current status of the design,fabrication,and characterization of Sb-based HEMTs (6.05Am) and HBTs(6.2Am) in our group will be presented.",

author = "R. Magno and Boos, {J. B.} and Bennett, {B. R.} and K. Ikossi and Glaser, {E. R.} and Papanicolaou, {N. A.} and Anconca, {M. G.} and Tinkham, {B. P.} and W. Kruppa and D. Park and Shanabrook, {B. V.} and J. Mittereder and W. Chang and Hobart, {K. D.} and R. Bass and Dietrich, {H. B.} and Mohney, {S. E.} and S. Wang and J. Robinson and R. Tsai and M. Barsky and A. Gutierrez",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",

year = "2003",

doi = "10.1109/ISCS.2003.1239962",

language = "English (US)",

series = "IEEE International Symposium on Compound Semiconductors, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "175--176",

booktitle = "2003 International Symposium on Compound Semiconductors, ISCS 2003",

address = "United States",

}

Magno, R, Boos, JB, Bennett, BR, Ikossi, K, Glaser, ER, Papanicolaou, NA, Anconca, MG, Tinkham, BP, Kruppa, W, Park, D, Shanabrook, BV, Mittereder, J, Chang, W, Hobart, KD, Bass, R, Dietrich, HB, Mohney, SE, Wang, S, Robinson, J, Tsai, R, Barsky, M & Gutierrez, A 2003, High speed, low power electronics using Sb-based semiconductors. in 2003 International Symposium on Compound Semiconductors, ISCS 2003., 1239962, IEEE International Symposium on Compound Semiconductors, Proceedings, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 175-176, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 8/25/03. https://doi.org/10.1109/ISCS.2003.1239962

High speed, low power electronics using Sb-based semiconductors. / Magno, R.; Boos, J. B.; Bennett, B. R. et al.
2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 175-176 1239962 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - High speed, low power electronics using Sb-based semiconductors

AU - Magno, R.

AU - Boos, J. B.

AU - Bennett, B. R.

AU - Ikossi, K.

AU - Glaser, E. R.

AU - Papanicolaou, N. A.

AU - Anconca, M. G.

AU - Tinkham, B. P.

AU - Kruppa, W.

AU - Park, D.

AU - Shanabrook, B. V.

AU - Mittereder, J.

AU - Chang, W.

AU - Hobart, K. D.

AU - Bass, R.

AU - Dietrich, H. B.

AU - Mohney, S. E.

AU - Wang, S.

AU - Robinson, J.

AU - Tsai, R.

AU - Barsky, M.

AU - Gutierrez, A.

PY - 2003

Y1 - 2003

N2 - In this paper the current status of the design,fabrication,and characterization of Sb-based HEMTs (6.05Am) and HBTs(6.2Am) in our group will be presented.

AB - In this paper the current status of the design,fabrication,and characterization of Sb-based HEMTs (6.05Am) and HBTs(6.2Am) in our group will be presented.

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U2 - 10.1109/ISCS.2003.1239962

DO - 10.1109/ISCS.2003.1239962

M3 - Conference contribution

AN - SCOPUS:84943537421

T3 - IEEE International Symposium on Compound Semiconductors, Proceedings

SP - 175

EP - 176

BT - 2003 International Symposium on Compound Semiconductors, ISCS 2003

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2003 International Symposium on Compound Semiconductors, ISCS 2003

Y2 - 25 August 2003 through 27 August 2003

ER -

Magno R, Boos JB, Bennett BR, Ikossi K, Glaser ER, Papanicolaou NA et al. High speed, low power electronics using Sb-based semiconductors. In 2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 175-176. 1239962. (IEEE International Symposium on Compound Semiconductors, Proceedings). doi: 10.1109/ISCS.2003.1239962

High speed, low power electronics using Sb-based semiconductors

Abstract

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Other

All Science Journal Classification (ASJC) codes

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