High-Tc field-effect transistor-like structure made from YBCO ultrathin films (Invited Paper)

Xiaoxing Xi; Q. Li; C. Doughty; A. Walkenhorst; S. N. Mao; C. Kwon; S. Bhattacharya; Alp T. Findikoglu; T. Venkatesan

High-Tc field-effect transistor-like structure made from YBCO ultrathin films (Invited Paper)

Xiaoxing Xi
, Q. Li
, C. Doughty
, A. Walkenhorst
, S. N. Mao
, C. Kwon
, S. Bhattacharya
, Alp T. Findikoglu
, T. Venkatesan

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

A high-T_c field-effect transistor-like structure (SuFET) was made rhich consisted of an ultrathin YBa₂Cu₃O_7-x (YBCO) film, a dielectric SrTiO₃ layer, and a gold gate electrode. The use of ultrathin films of a few unit cells thickness and an epitaxially grown dielectric layer allowed a relative change in the areal carrier density of YBCO in excess of 20%. A comparable amount of modulation was obtained in normal state resistivity and T_c. The J_c of the channel layer was changed by approximately 90% when a gate voltage was applied, showing the promise to build a field effect device using high-T_c superconductors.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Rajendra Singh, Martin Nisenoff, Davor Pavuna
Publisher	Publ by Int Soc for Optical Engineering
Pages	118-125
Number of pages	8
ISBN (Print)	0819407283
State	Published - 1992
Event	Progress in High-Temperature Superconducting Transistors and Other Devices II - San Jose, CA, USA Duration: Sep 12 1991 → Sep 13 1991

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1597
ISSN (Print)	0277-786X

Other

Other	Progress in High-Temperature Superconducting Transistors and Other Devices II
City	San Jose, CA, USA
Period	9/12/91 → 9/13/91

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

Xi, X., Li, Q., Doughty, C., Walkenhorst, A., Mao, S. N., Kwon, C., Bhattacharya, S., Findikoglu, A. T., & Venkatesan, T. (1992). High-Tc field-effect transistor-like structure made from YBCO ultrathin films (Invited Paper). In R. Singh, M. Nisenoff, & D. Pavuna (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 118-125). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1597). Publ by Int Soc for Optical Engineering.

Xi, Xiaoxing ; Li, Q. ; Doughty, C. et al. / High-Tc field-effect transistor-like structure made from YBCO ultrathin films (Invited Paper). Proceedings of SPIE - The International Society for Optical Engineering. editor / Rajendra Singh ; Martin Nisenoff ; Davor Pavuna. Publ by Int Soc for Optical Engineering, 1992. pp. 118-125 (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{f34c286d7e30491c9826cc8b4465b697,

title = "High-Tc field-effect transistor-like structure made from YBCO ultrathin films (Invited Paper)",

abstract = "A high-Tc field-effect transistor-like structure (SuFET) was made rhich consisted of an ultrathin YBa2Cu3O7-x (YBCO) film, a dielectric SrTiO3 layer, and a gold gate electrode. The use of ultrathin films of a few unit cells thickness and an epitaxially grown dielectric layer allowed a relative change in the areal carrier density of YBCO in excess of 20\%. A comparable amount of modulation was obtained in normal state resistivity and T c. The Jc of the channel layer was changed by approximately 90\% when a gate voltage was applied, showing the promise to build a field effect device using high-Tc superconductors.",

author = "Xiaoxing Xi and Q. Li and C. Doughty and A. Walkenhorst and Mao, \{S. N.\} and C. Kwon and S. Bhattacharya and Findikoglu, \{Alp T.\} and T. Venkatesan",

year = "1992",

language = "English (US)",

isbn = "0819407283",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Publ by Int Soc for Optical Engineering",

pages = "118--125",

editor = "Rajendra Singh and Martin Nisenoff and Davor Pavuna",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Progress in High-Temperature Superconducting Transistors and Other Devices II ; Conference date: 12-09-1991 Through 13-09-1991",

}

Xi, X, Li, Q, Doughty, C, Walkenhorst, A, Mao, SN, Kwon, C, Bhattacharya, S, Findikoglu, AT & Venkatesan, T 1992, High-Tc field-effect transistor-like structure made from YBCO ultrathin films (Invited Paper). in R Singh, M Nisenoff & D Pavuna (eds), Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 1597, Publ by Int Soc for Optical Engineering, pp. 118-125, Progress in High-Temperature Superconducting Transistors and Other Devices II, San Jose, CA, USA, 9/12/91.

High-Tc field-effect transistor-like structure made from YBCO ultrathin films (Invited Paper). / Xi, Xiaoxing; Li, Q.; Doughty, C. et al.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Rajendra Singh; Martin Nisenoff; Davor Pavuna. Publ by Int Soc for Optical Engineering, 1992. p. 118-125 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1597).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - High-Tc field-effect transistor-like structure made from YBCO ultrathin films (Invited Paper)

AU - Xi, Xiaoxing

AU - Li, Q.

AU - Doughty, C.

AU - Walkenhorst, A.

AU - Mao, S. N.

AU - Kwon, C.

AU - Bhattacharya, S.

AU - Findikoglu, Alp T.

AU - Venkatesan, T.

PY - 1992

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N2 - A high-Tc field-effect transistor-like structure (SuFET) was made rhich consisted of an ultrathin YBa2Cu3O7-x (YBCO) film, a dielectric SrTiO3 layer, and a gold gate electrode. The use of ultrathin films of a few unit cells thickness and an epitaxially grown dielectric layer allowed a relative change in the areal carrier density of YBCO in excess of 20%. A comparable amount of modulation was obtained in normal state resistivity and T c. The Jc of the channel layer was changed by approximately 90% when a gate voltage was applied, showing the promise to build a field effect device using high-Tc superconductors.

AB - A high-Tc field-effect transistor-like structure (SuFET) was made rhich consisted of an ultrathin YBa2Cu3O7-x (YBCO) film, a dielectric SrTiO3 layer, and a gold gate electrode. The use of ultrathin films of a few unit cells thickness and an epitaxially grown dielectric layer allowed a relative change in the areal carrier density of YBCO in excess of 20%. A comparable amount of modulation was obtained in normal state resistivity and T c. The Jc of the channel layer was changed by approximately 90% when a gate voltage was applied, showing the promise to build a field effect device using high-Tc superconductors.

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M3 - Conference contribution

AN - SCOPUS:0026682375

SN - 0819407283

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 118

EP - 125

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Singh, Rajendra

A2 - Nisenoff, Martin

A2 - Pavuna, Davor

PB - Publ by Int Soc for Optical Engineering

T2 - Progress in High-Temperature Superconducting Transistors and Other Devices II

Y2 - 12 September 1991 through 13 September 1991

ER -

Xi X, Li Q, Doughty C, Walkenhorst A, Mao SN, Kwon C et al. High-Tc field-effect transistor-like structure made from YBCO ultrathin films (Invited Paper). In Singh R, Nisenoff M, Pavuna D, editors, Proceedings of SPIE - The International Society for Optical Engineering. Publ by Int Soc for Optical Engineering. 1992. p. 118-125. (Proceedings of SPIE - The International Society for Optical Engineering).

High-Tc field-effect transistor-like structure made from YBCO ultrathin films (Invited Paper)

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