High temperature and current density induced degradation of multi-layer graphene

Baoming Wang, Md Amanul Haque, Alexander E. Mag-Isa, Jae Hyun Kim, Hak Joo Lee

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We present evidence of moderate current density, when accompanied with high temperature, promoting migration of foreign atoms on the surface of multi-layer graphene. Our in situ transmission electron microscope experiments show migration of silicon atoms at temperatures above 800 °C and current density around 4.2 × 107 A/cm2. Originating from the micro-machined silicon structures that clamp the freestanding specimen, the atoms are observed to react with the carbon atoms in the multi-layer graphene to produce silicon carbide at temperatures of 900-1000°C. In the absence of electrical current, there is no migration of silicon and only pyrolysis of polymeric residue is observed.

Original languageEnglish (US)
Article number163103
JournalApplied Physics Letters
Issue number16
StatePublished - Oct 19 2015

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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