High-temperature-capable ALD-based inorganic lift-off process

Sora Lee, Timothy N. Walter, Suzanne E. Mohney, Thomas N. Jackson

Research output: Contribution to journalArticlepeer-review


Lift-off is a useful method to pattern metals or other materials in semiconductor device fabrication. Polymer photoresists are commonly used for lift-off; however, these resists cannot be used when the device fabrication requires high temperature with the lift-off materials in place. Here, we have used bilayer stacks of metal oxides deposited by plasma-enhanced atomic layer deposition (PEALD) to provide a lift-off process compatible with high temperatures (>500 °C). By using selective wet-etching techniques, we successfully created reentrant or undercut structures and achieved lift-off for micro- and nano-scale devices. We also demonstrated that the metal-oxide based inorganic lift-off process allows high-temperature material deposition and/or annealing as a part of the fabrication process. The inorganic lift-off technique overcomes temperature limits of polymer resists and provides a photoresist-residue-free and high-temperature capable process.

Original languageEnglish (US)
Article number105809
JournalMaterials Science in Semiconductor Processing
StatePublished - Aug 1 2021

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'High-temperature-capable ALD-based inorganic lift-off process'. Together they form a unique fingerprint.

Cite this