High-temperature-capable ALD-based inorganic lift-off process

Chemical Compounds

• Semiconductor Device Fabrication 100%
• Metal Oxide 87%
• Atomic Layer Epitaxy 60%
• Annealing 41%
• Metal 23%

Engineering & Materials Science

• Temperature 42%
• Photoresists 38%
• Fabrication 33%
• Metals 28%
• Oxides 25%
• Atomic layer deposition 23%
• Polymers 22%
• Wet etching 20%
• Semiconductor devices 17%
• Annealing 14%
• Plasmas 13%

Physics & Astronomy

• photoresists 31%
• metal oxides 28%
• fabrication 27%
• refractory materials 19%
• polymers 17%
• atomic layer epitaxy 15%
• semiconductor devices 15%
• etching 11%
• annealing 9%
• metals 7%
• temperature 4%